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首页> 外文期刊>Smart Materials & Structures >Phase field simulations of the poling process and nonlinear behavior of ferroelectric polycrystals with semiconducting grain boundaries
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Phase field simulations of the poling process and nonlinear behavior of ferroelectric polycrystals with semiconducting grain boundaries

机译：具有半导体晶界的铁电多晶的极化过程和非线性行为的相场模拟

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摘要

The effect of grain boundary conductivity on the poling process and the nonlinear electromechanical behaviors of ferroelectric polycrystals are investigated through the use of a phase field model. The grain boundary is modeled as a semiconductor in the phase field model via Maxwell’s equations, which consider the drift of free charges under an electric field. The simulation results show that the poling electric field of the ferroelectric polycrystal with the semiconducting grain boundary is much larger than that of an insulating grain boundary, which is due to the screening of polarization-induced charges at the grain boundaries. The P-E hysteresis loop becomes narrow, and the ferroelectric property degrades in the presence of a semiconducting grain boundary; this indicates that the grain boundary conductivity has a significant influence on the nonlinear behavior of the ferroelectric polycrystals. On the other hand, the grain boundary conductivity, however, has less effect on the response of the ferroelectric polycrystals to a mechanical load. The present work provides an insight into the effect of the charge leakage, which is induced by the material defects, e.g., the grain boundary, on the electromechanical properties of piezoelectric ceramics.
机译：通过使用相场模型，研究了晶界电导率对极化过程和铁电多晶非线性机电行为的影响。通过麦克斯韦方程，将晶界建模为相场模型中的半导体，该方程考虑了电场下自由电荷的漂移。仿真结果表明，具有半导电晶界的铁电多晶的极化电场远大于绝缘晶界的极化电场，这是由于在晶界处极化感应电荷的屏蔽所致。在存在半导体晶界的情况下，P-E磁滞回线变窄，铁电特性降低。这表明晶界电导率对铁电多晶的非线性行为有重要影响。另一方面，晶界导电性对铁电多晶对机械载荷的响应的影响较小。本工作提供了由材料缺陷例如晶粒边界引起的电荷泄漏对压电陶瓷的机电性能的影响的见解。

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