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Doping GaP Core-Shell Nanowire pn-Junctions: A Study by Off-Axis Electron Holography

机译：掺杂GaP核壳纳米线pn结：离轴电子全息术的研究

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The doping process in GaP core-shell nanowire pn-junctions using different precursors is evaluated by mapping the nanowires' electrostatic potential distribution by means of off-axis electron holography. Three precursors, triethyltin (TESn), ditertiarybutylselenide, and silane are investigated for n-type doping of nanowire shells; among them, TESn is shown to be the most efficient precursor. Off-axis electron holography reveals higher electrostatic potentials in the regions of nanowire cores grown by the vapor-liquid-solid (VLS) mechanism (axial growth) than the regions grown parasitically by the vapor-solid (VS) mechanism (radial growth), attributed to different incorporation efficiency between VLS and VS of unintentional p-type carbon doping originating from the trimethylgallium precursor. This study shows that off-axis electron holography of doped nanowires is unique in terms of the ability to map the electrostatic potential and thereby the active dopant distribution with high spatial resolution.
机译：通过使用离轴电子全息图绘制纳米线的静电势分布，可以评估使用不同前体的GaP核壳纳米线pn结中的掺杂过程。研究了三种前驱物三乙基锡（TESn），二叔丁基硒化钠和硅烷用于纳米线壳的n型掺杂。其中，TESn被证明是最有效的前体。离轴电子全息图显示，通过气液固（VLS）机理（轴向生长）生长的纳米线芯区域的静电势高于通过气固（VS）机理寄生性生长的区域（径向生长）的静电势，这归因于源于三甲基镓前体的无意p型碳掺杂的VLS和VS之间的掺入效率不同。这项研究表明，掺杂纳米线的离轴电子全息图在绘制静电势以及由此以高空间分辨率绘制有源掺杂剂分布方面具有独特性。

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