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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Performance enhancement of mc-Si solar cells due to synergetic effect of plasma texturization and SiN_x:H AR coating
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Performance enhancement of mc-Si solar cells due to synergetic effect of plasma texturization and SiN_x:H AR coating

机译：等离子体织构化和SiN_x：H AR涂层的协同效应增强了mc-Si太阳能电池的性能

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摘要

The present paper discusses the plausible physical processes dominant during plasma texturization of multicrystalline silicon (mc-Si) wafers, deposition of silicon nitride (SiN_x) antireflection (AR) coating and firing of contacts through it. During plasma texturization, it is observed that by using low RF power density and loading wafers on the ground electrode, the texturization process is dominated by chemical etching. The resulting surface of the wafer shows low-reflectivity (<10% in wavelength range 350-800 nm) and low-defect density leading to improved minority carrier lifetime. It is postulated that plasma-etched nanoscale structures accelerate the migration of hydrogen released during firing of contacts. As a result of these physical processes, an improvement up to ~2.4% in absolute efficiency of large area (~149 cm~2) multicrystalline silicon solar cells has been achieved.
机译：本文讨论了在多晶硅（mc-Si）晶片的等离子体织构化，氮化硅（SiN_x）减反射（AR）涂层的沉积以及通过其激发触点过程中可能发生的物理过程。在等离子体纹理化过程中，可以观察到，通过使用低RF功率密度并将晶片加载到接地电极上，纹理化过程主要由化学蚀刻控制。所得的晶片表面显示出低反射率（在350-800 nm波长范围内<10％）和低缺陷密度，从而改善了少数载流子寿命。据推测，等离子刻蚀的纳米级结构可加速触点烧结过程中释放的氢的迁移。这些物理过程的结果是，大面积（〜149 cm〜2）多晶硅太阳能电池的绝对效率提高了约2.4％。

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