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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Photoelectrochemical performance of Cu-doped ZnIn2S4 electrodes created using chemical bath deposition
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Photoelectrochemical performance of Cu-doped ZnIn2S4 electrodes created using chemical bath deposition

机译：化学浴沉积产生的掺杂Cu的ZnIn2S4电极的光电化学性能

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摘要

A solution growth method for the deposition of Cu-doped zincindiumsulfide (ZnIn2S4) semiconductor film electrodes is presented. The structural, optical, and photoelectrochemical (PEC) properties of samples were studied as a function of Cu content in samples. The X-ray diffraction pattern of the cubic ZnIn2S4 phase of an undoped sample was obtained. No Cu alloys or other binary compounds that included the Cu element were present in Cu-doped ZnIn2S4 samples. Images from a scanning electron microscope and atomic ratios of elements in samples obtained from the energy dispersion analysis of X-ray reveal a change in surface morphology and composition for Cu-doped ZnIn2S4 samples. The direct energy band gaps, indirect energy band gaps, and thicknesses of samples prepared in this study varied in the ranges 2.072.58 eV, 1.602.06 eV, and 521879 nm, respectively. The maximum photoelectrochemical response of samples in 0.5 M K2SO4 aqueous solution reached 1.15 mA cm-2 at an external potential of 1.0 V vs. an Ag/AgCl reference electrode under illumination using a 300-W Xe lamp with light intensity kept at 100 mW cm-2. The experimental results show that Cu doping with Cu/(CuZn) atomic ratio of 0.08 in samples improves the performance of the ZnIn2S4 photoabsorber for PEC applications.
机译：提出了一种溶液生长方法，用于沉积掺杂铜的硫化锌铟（ZnIn2S4）半导体膜电极。研究了样品的结构，光学和光电化学（PEC）特性与样品中Cu含量的关系。获得了未掺杂样品的立方ZnIn2S4相的X射线衍射图。掺杂铜的ZnIn2S4样品中没有包含铜元素的铜合金或其他二元化合物。通过扫描电子显微镜获得的图像以及通过X射线能量色散分析获得的样品中元素的原子比，揭示了掺杂Cu的ZnIn2S4样品的表面形态和组成发生了变化。本研究中制备的样品的直接能带隙，间接能带隙和厚度分别在2.072.58 eV，1.602.06 eV和521879 nm范围内变化。相对于Ag / AgCl参比电极，在0.5 M K2SO4水溶液中的样品在0.5 M K2SO4水溶液中的最大光电化学响应在使用300W Xe灯照明且光强度保持在100 mW cm的条件下达到1.15 mA cm-2 -2。实验结果表明，样品中Cu /（CuZn）原子比为0.08的Cu掺杂可改善ZnIn2S4光吸收剂在PEC应用中的性能。

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