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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Reduction of plasma-induced damage by electron beam excited plasma CVD
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Reduction of plasma-induced damage by electron beam excited plasma CVD

机译：通过电子束激发等离子体CVD减少等离子体引起的损伤

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The electron beam excited plasma (EBEP-) CVD has succeeded in making nano-crystaline films. On the other hand, the existence of the plasma-induced damage by EBEP-CVD has been confirmed using the hydrogen plasma by measuring the photoluminescence (PL). After plasma exposure, broad band peak appears in the region of 1.0-0.78 eV (1.2-1.6 mum), and intensity of bound exciton peak with energy of 1.093 eV, which is measured and the non-irradiated silicon has been decreased. The same experiment was also performed with RF plasma and the peak appeared not only for EBEP but also for conventional RF plasma. The damage peak tends to disappear over 420 degreesC of the substrate temperature. The damage recovery analysis has been done in relation to the annealing temperature of the substrate after the plasma exposure. Exciton peak has been increased by increasing the temperature especially at 350 degreesC. Furthermore, plasma-induced peak intensity has been decreased at temperature higher than 500 degreesC. Similar peak has been observed in the samples irradiated with high-energy protons. Therefore, positive ions in the plasma are thought to be the source of the damage of the silicon. The origin of the plasma-induced defect in Si is also considered. According to these results, the electric potential of substrate was controlled in order to avoid collision with positive ions in the plasma. When it was set to zero, plasma-induced peaks did not appear. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 11]
机译：电子束激发等离子体（EBEP-）CVD已成功制造了纳米晶体膜。另一方面，已经通过使用氢等离子体通过测量光致发光（PL）确认了由EBEP-CVD引起的等离子体引起的损伤的存在。等离子体暴露后，宽带峰出现在1.0-0.78 eV（1.2-1.6 mum）的范围内，结合激子峰的强度为1.093 eV，被测量，未辐照硅减少了。对RF等离子体也进行了相同的实验，不仅EBEP出现了峰，常规RF等离子体也出现了峰。损伤峰在基板温度的420℃以上趋于消失。已经针对等离子体暴露之后的基板的退火温度进行了损伤恢复分析。激子峰通过增加温度而增加，尤其是在350摄氏度时。此外，在高于500℃的温度下，等离子体引起的峰值强度已经降低。在高能质子辐照的样品中也观察到了类似的峰。因此，等离子体中的正离子被认为是硅损坏的来源。还考虑了等离子体引起的Si缺陷的起源。根据这些结果，控制基板的电位以避免与等离子体中的正离子碰撞。设置为零时，不会出现血浆诱导的峰。 （C）2001 Elsevier Science B.V.保留所有权利。 [参考：11]

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