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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >High-quality thin film GaAs bonded to Si using SeS2 - A new approach for high-efficiency tandem solar cells
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High-quality thin film GaAs bonded to Si using SeS2 - A new approach for high-efficiency tandem solar cells

机译：使用SeS2将高质量的薄膜砷化镓（GaAs）结合到硅上-一种用于高效串联太阳能电池的新方法

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Epitaxial GaAs thin-films grown by metal organic chemical vapour deposition technique have been successfully bonded to Si substrates and lifted-off from the original GaAs substrate using the epitaxial lift-off (ELO) technique. The GaAs thin films transplanted in this manner to Si substrate were examined for its quality by photoluminescence, double-crystal X-ray diffraction and Raman scattering studies. The low FWHM, no peak energy and peak frequency shift were associated with the high crystalline quality of the bonded films. We have obtained a minority-carrier lifetime of 9.09 ns in a double heterostructure bonded to Si, which is nearly three times higher than heteroepitaxial GaAs on Si. The electron transport across the bonded interface was studied by observing the current-voltage characteristic. The electrical behaviour was improved by applying a voltage greater than 10V, necessary for current conduction. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 13]
机译：通过金属有机化学气相沉积技术生长的外延GaAs薄膜已成功粘合到Si衬底上，并使用外延剥离（ELO）技术从原始GaAs衬底剥离。通过光致发光，双晶X射线衍射和拉曼散射研究检查了以此方式移植到Si衬底上的GaAs薄膜的质量。低的FWHM，无峰能量和峰频移与键合膜的高结晶质量有关。在键合到Si的双异质结构中，我们获得了9.09 ns的少数载流子寿命，该寿命几乎是Si上异质外延GaAs的三倍。通过观察电流-电压特性研究了跨键合界面的电子传输。通过施加电流传导所需的大于10V的电压，可以改善电性能。 （C）2001 Elsevier Science B.V.保留所有权利。 [参考：13]

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