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Fabrication of surface-textured ZnO:Al/ITO bilayers with enhanced electrical and light-scattering properties

机译:具有电和光散射特性的表面纹理化ZnO:Al / ITO双层薄膜的制备

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摘要

Highly textured ZnO:Al/ITO bilayers with excellent electrical and light-scattering properties were prepared on glass substrates using RF magnetron sputtering followed by a wet-etching process. In the bilayer structure, the sputtered ZnO:Al films were deposited on highly conductive ITO-coated glass substrates, and the ZnO:Al surfaces were subsequently chemically etched with a 1% HCl solution to modify the surface morphology. After wet-etching for the as-deposited ZnO:Al films without ITO films, the diffuse transmittance of the ZnO:Al films without ITO films deposited up to 100 ℃ was enhanced by the rough surfaces, accompanied by an abrupt increase in the sheet resistance to approximately 300 Ω/ square due to the reduction in film thickness. The [001] orientation of the ZnO:Al films deposited on the ITO films with various crystalline orientations decreased significantly compared with the strong [001] preferred orientation of the ZnO:Al films deposited without the ITO films. For the textured ZnO:Al/ITO bilayers, a low sheet resistance below 10 Ω/square was obtained, and the light-scattering properties of these bilayers of 400—1100 nm were superior to those of the Asahi U glass that has been widely used as a transparent conducting electrode in thin-film solar cells. The material properties of the as-deposited and textured ZnO:Al/ITO bilayers with and without ITO films were systematically investigated.
机译:使用RF磁控溅射,然后进行湿法蚀刻工艺,在玻璃基板上制备具有优异电和光散射特性的高织构化ZnO:Al / ITO双层薄膜。在双层结构中,溅射的ZnO:Al膜沉积在高导电率的ITO涂层玻璃基板上,随后用1%HCl溶液对ZnO:Al表面进行化学蚀刻,以改变表面形态。湿法刻蚀无ITO膜的ZnO:Al膜后,粗糙表面提高了无ITO膜沉积的ZnO:Al膜在100℃时的漫透射率,并伴随着薄层电阻的突然增加。由于薄膜厚度的减小,最大约为300Ω/平方。与不沉积ITO膜的ZnO:Al膜的强[001]优选方向相比,沉积在具有各种晶体取向的ITO膜上的ZnO:Al膜的[001]取向显着降低。对于带纹理的ZnO:Al / ITO双层,可以获得低于10Ω/平方的低薄层电阻,并且这些400-1100 nm双层的光散射特性优于已被广泛使用的Asahi U玻璃作为薄膜太阳能电池中的透明导电电极。系统地研究了具有和不具有ITO膜的沉积和织构化ZnO:Al / ITO双层的材料性能。

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