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Dopant size effect on structural and transport properties of nanometric and single-phased TZP

机译：掺杂剂尺寸对纳米单相TZP结构和输运性能的影响

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摘要

Electrical properties of doped nanocrystalline ceramics of xR(2)O(3)-ZrO2 with 1less than or equal tox mol% final contentless than or equal to3.5 of Sc2O3, Yb2O3, Y2O3, Gd2O3 and Sm2O3 were studied. Rare-earth oxide dopants were selected for their lower valence (+3) compared to Zr4+ and for an increase in their ionic radii ranging from 0.087 to 0.109 nm, respectively, from Sc3+ to Sm3+. This systematic study is focused on compositions defined as the minimal dopant concentration at which the tetragonal single-phase is stabilized. These ceramics are characterized by a good purity (quantity of Si less than 0.1 wt.%) and are found to be perfectly stable in temperature, keeping their microstructure constant. Impedance spectroscopy was used to determine the tetragonal zirconia matrix electrical contribution and the internal interface blocking effect. Both specific and blocking conductivities decrease when the dopant ionic radius is increased. The influence of space-charge layers on the increasing blocking effect was suggested. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 30]
机译：研究了xR（2）O（3）-ZrO2掺杂的纳米晶陶瓷的电学性能，其中最终的Sc2O3，Yb2O3，Y2O3，Gd2O3和Sm2O3含量小于或等于1 mol％，最终含量小于或等于3.5。选择稀土氧化物掺杂剂是因为它们的价数比Zr4 +低（+3），并且其离子半径从Sc3 +到Sm3 +分别从0.087到0.109 nm。这项系统研究的重点是成分，定义为四方单相稳定的最低掺杂剂浓度。这些陶瓷的特征在于具有良好的纯度（Si的量小于0.1重量％），并且发现其在温度下完全稳定，从而保持其微结构恒定。阻抗谱用于确定四边形氧化锆基体的电学贡献和内部界面的阻挡作用。当掺杂剂离子半径增加时，比电导率和阻挡电导率都降低。提出了空间电荷层对增加阻挡作用的影响。 （C）2002 Elsevier Science B.V.保留所有权利。 [参考：30]

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