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首页> 外文期刊>Ceramic Engineering and Science Proceedings >THE EFFECT OF DOPING WITH TITANIA AND CALCIUM TITANATE ON THE MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF THE GIANT DIELECTRIC CONSTANT CERAMIC CaCu{sub}3Ti{sub}4O{sub}12
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THE EFFECT OF DOPING WITH TITANIA AND CALCIUM TITANATE ON THE MICROSTRUCTURE AND ELECTRICAL PROPERTIES OF THE GIANT DIELECTRIC CONSTANT CERAMIC CaCu{sub}3Ti{sub}4O{sub}12

机译：钛酸和钛酸钙的掺杂对大介电常数陶瓷CaCu {sub} 3Ti {sub} 4O {sub} 12的微观结构和电学性能的影响

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摘要

Small amounts (1-5 mole%) of TiO{sub}2 and CaTiO{sub}3 were added to the giant dielectric constant ceramic CaCu{sub}3Ti{sub}4O{sub}12 (CCTO) in the attempt to lower dielectric loss without sacrificing high permittivity. The undoped and doped ceramics had similar microstructures consisting of primarily large grains in the range of 35 to 40 microns. Doping CCTO with TiO{sub}2 lead to an increase in the dissipation factor of CaCu{sub}3Ti{sub}4O{sub}12 from 0.049 to a high of 0.078, while its permittivity increased from 43949 to 77585. Doping with CaTiO{sub}3 followed a similar trend as the tan δ increased to a high of 0.303 and the dielectric constant at 1 kHz increased to a high of 75687. Doping at these levels also led to a 50% drop in electrical breakdown voltage.
机译：尝试将少量（1-5摩尔％）的TiO {sub} 2和CaTiO {sub} 3添加到巨型介电陶瓷CaCu {sub} 3Ti {sub} 4O {sub} 12（CCTO）中，以降低介电损耗而不牺牲高介电常数。未掺杂和掺杂的陶瓷具有相似的微观结构，主要由35至40微米范围内的大晶粒组成。用TiO {sub} 2掺杂CCTO导致CaCu {sub} 3Ti {sub} 4O {sub} 12的耗散因数从0.049增加到0.078的高位，而其介电常数从43949增加到77585。 {sub} 3遵循类似的趋势，即tanδ增加到0.303的高点，并且1 kHz的介电常数增加到75687的高点。以这些水平掺杂会导致击穿电压下降50％。

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