Hot filament-dissociation of (CH3)(3)SiH and (CH3)(4)Si, probed by vacuum ultra violet laser time of flight mass spectroscopy

Sharma RC; Koshi M

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Hot filament-dissociation of (CH3)(3)SiH and (CH3)(4)Si, probed by vacuum ultra violet laser time of flight mass spectroscopy

机译：（CH3）（3）SiH和（CH3）（4）Si的热丝解离，通过真空紫外激光飞行时间质谱仪进行探测

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The decomposition of trimethylsilane and tetramethylsilane has been investigated for the first time, using hot wire (catalytic) at various temperatures. Trimethylsilane is catalytic-dissociated in these species SiH2, CH3SiH, CH3, CH2Si. Time of flight mass spectroscopy signal of these species are linearly increasing with increasing catalytic-temperature. Time of flight mass spectroscopy (TOFMS) signals of (CH3)(3)SiH and photo-dissociated into (CH3)(2)SiH are decreasing with increasing hot filament temperature. TOFMS signal of (CH3)(4)Si is decreasing with increasing hot wire temperature, but (CH3)(3)Si signal is almost constant with increasing the temperature. We calculated activation energies of dissociated species of the parental molecules for fundamental information of reaction kinetics for the first time. Catalytic-dissociation of trimethylsilane, and tetramethylsilane single source time of flight coupled single photon VUV (118 nm) photoionization collisionless radicals at temperature range of tungsten filament 800-2360 K. The study is focused to understand the fundamental information on reaction kinetics of these molecules at hot wire temperature, and processes of catalytic-chemical vapour deposition (Cat-CVD) technique which could be implemented in amorphous and crystalline SiC semiconductors thin films. (c) 2006 Elsevier B.V. All rights reserved.

机译：首次使用热线（催化）在各种温度下研究了三甲基硅烷和四甲基硅烷的分解。三甲基硅烷在这些物种SiH2，CH3SiH，CH3，CH2Si中催化离解。这些种类的飞行时间质谱信号随着催化温度的增加而线性增加。（CH3）（3）SiH的飞行时间质谱（TOFMS）信号和光解离为（CH3）（2）SiH的时间随着热灯丝温度的升高而降低。（CH3）（4）Si的TOFMS信号随着热线温度的升高而减小，但是（CH3）（3）Si的信号随温度升高而几乎恒定。我们首次计算了亲代分子解离物种的活化能，以获取反应动力学的基本信息。三甲基硅烷和四甲基硅烷单源飞行时间耦合耦合光解单光子VUV（118 nm）的光离子化无碰撞自由基在钨丝800-2360 K的温度范围内。该研究旨在了解这些分子的反应动力学的基本信息热线温度下的温度，以及可在非晶和结晶SiC半导体薄膜中实施的催化化学气相沉积（Cat-CVD）技术的过程。（c）2006 Elsevier B.V.保留所有权利。

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《Spectrochimica acta, Part A. Molecular and biomolecular spectroscopy》 |2006年第4期|共5页
作者
Sharma RC; Koshi M;
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正文语种 eng
中图分类分析化学;
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VUV time of flight mass spectroscopy; catalytic-dissociation; photofragmentation and photoionization; activation energies; molecular (CH3)SiH and (CH3)(4)Si; Cat-CVD; GROWTH; FILMS; TRIMETHYLSILANE; DECOMPOSITION; FIELD;

机译：VUV飞行时间质谱;催化离解;光碎裂和光电离;活化能;分子（CH3）SiH和（CH3）（4）Si;Cat-CVD;生长;薄膜;三甲基硅烷;分解;FIELD;

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3. Hot filament-dissociation of (CH3)(3)SiH and (CH3)(4)Si, probed by vacuum ultra violet laser time of flight mass spectroscopy [J] . Sharma RC, Koshi M Spectrochimica acta, Part A. Molecular and biomolecular spectroscopy . 2006,第3a4期

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Hot filament-dissociation of (CH3)(3)SiH and (CH3)(4)Si, probed by vacuum ultra violet laser time of flight mass spectroscopy

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