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首页> 外文期刊>Superconductor Science & Technology >Investigation of YBCO film growth by post-annealing of precursor films including BaF_2 at low-pressure oxygen atmosphere
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Investigation of YBCO film growth by post-annealing of precursor films including BaF_2 at low-pressure oxygen atmosphere

机译：通过在低压氧气气氛下对包括BaF_2在内的前驱膜进行后退火来研究YBCO膜的生长

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摘要

Precursor films were deposited by the co-evaporation technique using Y, BaF_2 and Cu as evaporation sources. Then, the films were annealed at low-pressure oxygen atmosphere without the introduction of water vapour, which was different from the so-called BaF_2 ex situ process. Previous studies have indicated that the c-axis-oriented YBCO films can be prepared by annealing at low-pressure oxygen atmosphere, and that the reaction of the precursor films during sample temperature elevation is very important in the present process according to reflection high-energy electron diffraction (RHEED) observation. Therefore, two kinds of samples, rapidly cooled down from 400 deg C and 630 deg C, were prepared for microstructural study. YBCO film growth in this process is discussed on the basis of the results of x-ray diffraction (XRD), RHEED and transmission electron microscopy (TEM).
机译：通过共蒸发技术，以Y，BaF_2和Cu为蒸发源，沉积前体薄膜。然后，将膜在低压氧气气氛下退火而不引入水蒸气，这不同于所谓的BaF_2非原位工艺。先前的研究表明，可以通过在低压氧气气氛下退火来制备c轴取向的YBCO膜，并且根据反射高能，在本过程中，样品温度升高期间前体膜的反应非常重要。电子衍射（RHEED）观察。因此，制备了两种样品，分别从400℃和630℃快速冷却下来，用于显微组织研究。根据X射线衍射（XRD），RHEED和透射电子显微镜（TEM）的结果，讨论了该过程中YBCO膜的生长。

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