...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Superconductor Science & Technology >Monotonic decrease of T_cs with thinning of the superconducting MgB_2 layer in MgB_2/Ni and MgB_2/B alternately-layered thin films
【24h】

Monotonic decrease of T_cs with thinning of the superconducting MgB_2 layer in MgB_2/Ni and MgB_2/B alternately-layered thin films

机译：随着MgB_2 / Ni和MgB_2 / B交替多层薄膜中超导MgB_2层的变薄，T_cs的单调减少

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We prepared MgB_2/Ni and MgB_2/B alternately-layered films using electron beam evaporation and coaxial vacuum arc evaporation techniques without any post-annealing. The thickness of each MgB_2 layer was designed to be 42, 24 or 15 nm for both MgB_2/Ni and MgB_2/B alternately-layered films. We confirmed that the layered structure was successfully obtained from the scanning transmission electron microscopic cross-sectional image of the MgB_2/Ni alternately-layered film. The critical temperature, T_c, of the alternately-layered film decreased as the MgB_2 layer became thinner, for both MgB_2/Ni and MgB_2/B films. Moreover, the T_c was affected by only the MgB_2 layer thickness, and was independent of the inserted layer materials.
机译：我们使用电子束蒸发和同轴真空电弧蒸发技术制备了MgB_2 / Ni和MgB_2 / B交替层膜，没有进行任何后退火处理。对于MgB_2 / Ni和MgB_2 / B交替层膜，每个MgB_2层的厚度均设计为42、24或15 nm。我们确认，从MgB_2 / Ni交替层膜的扫描透射电子显微镜截面图像成功地获得了层状结构。对于MgB_2 / Ni和MgB_2 / B膜，随着MgB_2层变薄，交替层膜的临界温度T_c降低。此外，T_c仅受MgB_2层厚度的影响，并且与插入层材料无关。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号