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首页> 外文期刊>Superconductor Science & Technology >Influence of the cooling rate on the main factors affecting current-carrying ability in pure and SiC-doped MgB2 superconductors
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Influence of the cooling rate on the main factors affecting current-carrying ability in pure and SiC-doped MgB2 superconductors

机译：冷却速度对影响纯净和掺杂SiC的MgB2超导体载流能力的主要因素的影响

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摘要

We have systematically studied and compared the effect of cooling rate on microstructure, critical current density, upper critical field and irreversibility field in pure and 10 wt% SiC-added MgB2 superconductors. The sintering process was carried out on the samples at a temperature of 750 degrees C for 1 h followed by quenching or cooling to room temperature in 0.3 h (2433 degrees C h(-1)), 14 h (52 degrees C h(-1)) and 25 h (30 degrees C h(-1) ). Changes in the microstructure due to variations in cooling rate have been studied with the help of scanning and transmission electron microscopy. Correlations between microstructure and superconducting properties have been observed, identified and explained for both pure and SiC-added MgB2 samples. Modifications to the pinning environment and grain boundary transparency are considered to be responsible for variations in the current-carrying ability. The dominant pinning on grain boundaries in the pure MgB2 samples and on nano-inclusions (inducing accompanying defects) in the SiC-doped samples is clearly distinguished. On the basis of our experimental results, we have concluded that the cooling rate can be an important parameter influencing the superconducting properties of MgB2 samples.
机译：我们已经系统地研究和比较了冷却速率对纯的和10 wt％的SiC添加的MgB2超导体的微观结构，临界电流密度，上临界场和不可逆场的影响。样品在750摄氏度的温度下烧结1小时，然后在0.3个小时（2433摄氏度（-1）），14个小时（52摄氏度（-）的温度下淬火或冷却至室温1））和25小时（30摄氏度h（-1））。借助于扫描和透射电子显微镜已经研究了由于冷却速率的变化引起的微观结构的变化。对于纯和添加SiC的MgB2样品，都已观察，鉴定和解释了微观结构与超导性能之间的相关性。钉扎环境和晶界透明性的改变被认为是造成载流能力变化的原因。可以清楚地区分纯MgB2样品中的晶界和SiC掺杂样品中的纳米夹杂物（诱发伴随缺陷）的主要钉扎作用。根据我们的实验结果，我们得出结论，冷却速度可能是影响MgB2样品超导性能的重要参数。

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