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Behavior of unsaturated organic molecules in the nanospace of stage-2 cesium-graphite intercalation compounds

机译：第二阶段铯-石墨插层化合物纳米空间中不饱和有机分子的行为

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Intercalation reaction of benzene (C_6H_6) into CsC_(24) and the characteristics of resulting ternary graphite intercalation compound (GIC) have been investigated, in comparison with the similar CsC_(24)-ternary GICs with ethylene (C_2H_4) and acrylonitrile (C_2H_3CN), and the behavior of these organic molecules within the interlayer nanospace has been discussed. The stability of these ternary GICs under exposure in air, in both stage structure and electrical conductivity was found to be in the order of C_2H_4-, C_6H_6- and C_2H_3CN-GICs. This result was reasonably explained as follows: the C_2H_4 molecules in the interlayer space oligomerize considerably and form network preventing diffusion of the Cs atoms in the interlayer, while the C_6H_6 molecules form only dimers or trimers and unable to form network, and the C_2H_3CN molecules, in spite of their strong tendency to polymerize, apparently do not form oligomers in the interlayer space, and its ternary GIC tends to degrade easily. By the electrical and galvanomagnetic measurements, it is revealed that the dominant carrier of these ternary GICs is electrons, even when the electrical conductivity decreases considerably after prolonged exposure in air, while the host graphite, Grafoil, shows two-carrier conduction. This fact indicates that the degradation of the ternary GICs occurs mainly at the periphery or surface layer of the crystallite, and at the inside of the crystallite, the ternary stage structure is retained unchanged.
机译：与类似的CsC_（24）-三元GIC与乙烯（C_2H_4）和丙烯腈（C_2H_3CN）相比，研究了苯（C_6H_6）嵌入CsC_（24）的嵌入反应和所得三元石墨嵌入化合物（GIC）的特性。 ，并讨论了这些有机分子在层间纳米空间中的行为。这些三元GIC在空气中暴露时的稳定性，阶段结构和电导率均约为C_2H_4-，C_6H_6-和C_2H_3CN-GIC。合理解释此结果的原因如下：层间空间中的C_2H_4分子大量低聚并形成网络，阻止了Cs原子在层间扩散，而C_6H_6分子仅形成二聚体或三聚体而无法形成网络，而C_2H_3CN分子尽管它们具有很强的聚合倾向，但显然在层间空间中不会形成低聚物，并且其三元GIC倾向于容易降解。通过电和电磁测量，揭示了这些三元GIC的主要载体是电子，即使长时间暴露于空气中后电导率显着降低，而主体石墨Grafoil却表现出两载体导电。该事实表明三元GIC的降解主要发生在微晶的外围或表面层，并且在微晶内部，三元级结构保持不变。

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