Open-ended stacking-fault tetrahedra in X-ray topographs of cubic silicon carbide

W. M. Vetter; M. Dudley

首页> 外文期刊>Philosophical Magazine Letters >Open-ended stacking-fault tetrahedra in X-ray topographs of cubic silicon carbide

【24h】

Open-ended stacking-fault tetrahedra in X-ray topographs of cubic silicon carbide

机译：立方碳化硅的X射线形貌图中的开放式堆积缺陷四面体

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Trihedral configurations of stacking faults have been observed in X-ray topographs of a 3C-SiC platelet. The trihedra were formed of stacking faults lying on three {111} planes, and 1/6 (110) stair-rod dislocations formed their edges. The open side of the trihedra extended to the crystal's surface, giving these defects the same form as the open-ended stacking-fault tetrahedra that are sometimes observed in the transmission electron microscopy of misfit-strained epitaxial layers. However, these trihedra are much larger, 40-200 μm across, and are a growth defect, originating from a mechanism other than the condensation of vacancies or the release of misfit strain.

机译：在3C-SiC血小板的X射线形貌图中已观察到堆垛层错的三面体构造。三面体由位于三个{111}平面上的堆积断层形成，并且1/6（110）的阶梯杆位错形成了它们的边缘。三面体的开放侧延伸到晶体表面，使这些缺陷具有与开放式堆叠缺陷四面体相同的形式，这种缺陷有时在失配应变的外延层的透射电子显微镜中观察到。但是，这些三面体更大，跨度为40-200μm，并且是生长缺陷，其起因于空位凝结或错配应变释放以外的机制。

著录项

来源
《Philosophical Magazine Letters》 |2003年第8期|共4页
作者
W. M. Vetter; M. Dudley;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类物理学;
关键词

相似文献

外文文献
中文文献
专利

1. Open-ended stacking-fault tetrahedra in X-ray topographs of cubic silicon carbide [J] . W. M. Vetter, M. Dudley Philosophical Magazine Letters . 2003,第8期

机译：立方碳化硅的X射线形貌图中的开放式堆积缺陷四面体
2. Simulation of threading dislocation images in X-ray topographs of silicon carbide homo-epilayers [J] . Vetter WM, Tsuchida H, Kamata I, Journal of Applied Crystallography . 2005,第3期

机译：碳化硅同质外延层的X射线地形图中的螺纹位错图像的模拟
3. Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy [J] . M. A. Capano, B. C. Kim, A. R. Smith, Journal of Applied Physics . 2006,第8期

机译：通过拉曼光谱法测量的立方碳化硅中的残余应变与X射线衍射和透射电子显微镜相关
4. Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers [C] . W. M. Vetter, H. Tsuchida, I. Kamata, International Conference on Silicon Carbide and Related Materials; 20050918-23; Pittsburgh,PA(US) . 2006

机译：碳化硅同质外延层的X射线地形图中的螺纹边缘位错图像的模拟
5. Electronic properties of stacking-fault induced heterostructures in silicon carbide studied with ballistic electron emission microscopy. [D] . Park, Kibog. 2006

机译：用弹道电子发射显微镜研究了碳化硅中堆垛层错诱导的异质结构的电子性质。
6. Experimentally obtained and computer-simulated X-ray non-coplanar 18-beam pinhole topographs for a silicon crystal [O] . Kouhei Okitsu, Yasuhiko Imai, Yoshitaka Yoda -1

机译：实验获得和计算机模拟的硅晶体X射线非共面18光束针孔形貌仪
7. Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy [O] . Capano, M. A., Kim, B. C., Smith, A. R., 2006

机译：拉曼光谱法测量立方碳化硅中的残余应变 X射线衍射和透射电子显微镜

Open-ended stacking-fault tetrahedra in X-ray topographs of cubic silicon carbide

摘要

著录项

相似文献

相关主题

期刊订阅