Pattern evolution of crystalline Ge aggregates during annealing of an Al/Ge bilayer film deposited on a SiO_2 substrate

Minoru Doi; Yasuhito Suzuki; Toshiyuki Koyama; Futoshi Katsuki

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Pattern evolution of crystalline Ge aggregates during annealing of an Al/Ge bilayer film deposited on a SiO_2 substrate

机译：沉积在SiO_2衬底上的Al / Ge双层膜退火期间结晶Ge聚集体的图案演变

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When an Al/Ge bilayer film deposited on a SiO_2 substrate is annealed at 373-398 K, Ge atoms diffuse out from the inner amorphous Ge layer and spread over the free surface of the outer Al layer to form crystalline Ge aggregates exhibiting complex substructures. Scanning electron microscopy observations indicate that the activation energy for the pattern evolution of Be aggregates on the free surface because of annealing is 1.56eV which is about half the activation energy for crystallization of amorphous Ge.

机译：当沉积在SiO_2衬底上的Al / Ge双层膜在373-398 K退火时，Ge原子从内部非晶Ge层扩散出来并散布在外部Al层的自由表面上，形成具有复杂子结构的结晶Ge聚集体。扫描电子显微镜观察表明，由于退火，用于Be的图案演化的活化能在自由表面上聚集，为1.56eV，约为非晶态Ge结晶活化能的一半。

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《Philosophical Magazine Letters》 |1998年第3期|共5页
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Minoru Doi; Yasuhito Suzuki; Toshiyuki Koyama; Futoshi Katsuki;
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1. Pattern evolution of crystalline Ge aggregates during annealing of an Al/Ge bilayer film deposited on a SiO_2 substrate [J] . Minoru Doi, Yasuhito Suzuki, Toshiyuki Koyama, Philosophical Magazine Letters . 1998,第3期

机译：沉积在SiO_2衬底上的Al / Ge双层膜退火期间结晶Ge聚集体的图案演变
2. L1_0 FePt thin films with [0 01] crystalline growth fabricated by SiO_2 addition: rapid thermal annealing and dot patterning of the films [J] . S. Ishio, T. Narisawa, S. Takahashi, Journal of magnetism and magnetic materials . 2012,第3期

机译：通过添加SiO_2制备具有[0 01]晶体生长的L1_0 FePt薄膜：薄膜的快速热退火和点图案化
3. Effect of thermal annealing on microstructural properties of Ti/Ge_2Sb_2Te_5/Ti thin films deposited on SiO_2/Si substrates by a sputtering method [J] . S.Y. Kim, H.S. Lee, I.S. Chung, Applied Surface Science . 2007,第8期

机译：热退火对通过溅射法沉积在SiO_2 / Si衬底上的Ti / Ge_2Sb_2Te_5 / Ti薄膜微结构性能的影响
4. Pattern Evolution of Crystalline Aggregates of Ge or Si during Annealing of Ag/Ge, Al/Ge and Al/Si Bilayer Films [C] . Minoru Doi, American Institute of Physics Tohwa University international symposium on slow dynamics in complex systems . 1999

机译：Ag / Ge，Al / Ge和Al / Si双层膜退火Ge或Si晶体聚集体的图案演化
5. Film-substrate interactions in yttrium(1) barium(2) copper(3) oxygen(7-x) superconductor thin films deposited on oxide and alkaline earth fluoride substrates. [D] . Peters, Christopher Harry. 1993

机译：钇（1）钡（2）铜（3）氧（7-x）超导体薄膜中的膜-基底相互作用，沉积在氧化物和碱土金属氟化物基底上。
6. Large-scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV-nanoimprint lithography [O] . Lin Cui, Jie-Cai Han, Gui-Gen Wang, 2013

机译：通过软紫外-纳米压印光刻技术对图案化的Al薄膜进行退火处理大规模制造纳米图案化的蓝宝石衬底
7. Large-scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV-nanoimprint lithography [O] . Lin Cui, Jie-Cai Han, Gui-Gen Wang, 2013

机译：通过软紫外-纳米压印光刻技术对图案化的Al薄膜进行退火处理，大规模制造纳米图案化的蓝宝石衬底

Pattern evolution of crystalline Ge aggregates during annealing of an Al/Ge bilayer film deposited on a SiO_2 substrate

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