We present detailed structural and chemical studies on ultrathin zirconia films grown by ultraviolet oxidation and natural (no ultraviolet hight) oxidation of Zr precursor metal layers on SiO_2-passivated Si(100) wafers. Quantitative electronenergy-loss spectroscopy (EELS) was used to obtain the chemical composition and electronic structure on an atomic scale. The EELS O K near-edge fine structure was used as a fingerprint to study the stoichiometry and composition variation in the dielectric stacks. X-ray absorption spectroscopy studies were performed in order to aid interpretation of the EELS results. The electronic structure data are correlated with the electrical performance of the films.
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机译：我们介绍了通过在SiO_2钝化的Si（100）晶片上进行Zr前驱体金属层的紫外线氧化和自然（无紫外线高度）氧化而生长的超薄氧化锆薄膜的详细结构和化学研究。定量电子能损谱（EELS）用于获得原子级的化学组成和电子结构。 EELS O K近边缘精细结构用作指纹，以研究介电堆栈中的化学计量和组成变化。进行了X射线吸收光谱研究，以帮助解释EELS结果。电子结构数据与薄膜的电性能相关。
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