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首页> 外文期刊>Philosophical Magazine Letters >Synthesis and characterization of nanocrystalline MoBi_2Te_5 thin films for photoelectrode applications
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Synthesis and characterization of nanocrystalline MoBi_2Te_5 thin films for photoelectrode applications

机译：用于光电极的纳米晶MoBi_2Te_5薄膜的合成与表征

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Molybdenum bismuth telluride thin films have been prepared on clean glass substrate using arrested precipitation technique which is based on self-organized growth process. As deposited MoBi_2Te_5 thin films were dried in constant temperature oven at 110°C and further characterized for their optical, structural, morphological, compositional, and electrical analysis. Optical absorption spectra recorded in the wavelength range 300-800 nm showed band gap (E_g) 1.44 eV. X-ray diffraction pattern and scanning electron microscopic images showed that MoBi_2Te_5 thin films are granular, nanocrystalline having rhombohedral structure. The compositional analysis showed close agreements in theoretical and experimental atomic percentages of Mo~(4+) , Bi~(3+) , and Te~(2_) suggest that chemical formula MoBi_2Te_5 assigned to as deposited molybdenum bismuth telluride new material is confirmed. The electrical conductivity and thermoelectric power measurement showed that the films are semiconducting with n-type conduction. The fill factor and conversion efficiency was characterized by photoelectrochemical (PEC) technique. In this article, we report the optostructural, morphological, compositional, and electrical characteristics of nanocrystalline MoBi_2Te_5 thin films to check its suitability as photoelectrode in PEC cell.
机译：采用基于自组织生长过程的阻滞沉淀技术，在干净的玻璃基板上制备了碲化钼酸铋薄膜。将沉积的MoBi_2Te_5薄膜在110°C的恒温烘箱中干燥，并对其光学，结构，形态，组成和电学分析进行进一步表征。在300-800 nm波长范围内记录的光吸收光谱显示带隙（E_g）1.44 eV。 X射线衍射图谱和扫描电子显微镜图像表明，MoBi_2Te_5薄膜为颗粒状，具有菱形结构的纳米晶体。成分分析表明，Mo〜（4 +），Bi〜（3+）和Te〜（2_）的理论原子百分数和实验原子百分率紧密相关，这表明化学式为MoBi_2Te_5的碲化钼酸铋新材料被确认。电导率和热电功率测量表明，该膜是半导电的，具有n型导电性。填充因子和转化效率通过光电化学（PEC）技术表征。在本文中，我们报告了纳米晶体MoBi_2Te_5薄膜的光电结构，形态，组成和电学特性，以检查其在PEC电池中作为光电极的适用性。

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