Shape deformation by moving a glissile interface with one set of misfit dislocations

J.B. Yang; Z.G. Yang; Y. Nagai

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Shape deformation by moving a glissile interface with one set of misfit dislocations

机译：通过移动具有一组错配位错的易弯曲界面来变形

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Transformation and misfit dislocations are used to describe the motion of glissile interfaces with one set of misfit dislocations in the framework of the Frank-Bilby equation. The sweep of these glissile interfaces brings about an invariant-plane-strain type shape deformation. Our approach explains the glissile motion of martensitic interfaces and small-angle symmetrical tilt grain boundaries. It is consistent with the phenomenological theory of martensite crystallography but more flexible.

机译：在Frank-Bilby方程的框架内，使用变换和失配位错来描述具有一组失配位错的易滑界面的运动。这些易弯曲的界面的扫掠带来了不变的平面应变型形状变形。我们的方法解释了马氏体界面和小角度对称倾斜晶界的光滑运动。它与马氏体结晶学的现象学理论是一致的，但更为灵活。

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《Philosophical Magazine Letters》 |2009年第10期|共9页
作者
J.B. Yang; Z.G. Yang; Y. Nagai;
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正文语种 eng
中图分类物理学;
关键词
transformation dislocationslt; /keywordgt; lt; keywordgt; misfit dislocationslt; /keywordgt; lt; keywordgt; grain boundarieslt; /keywordgt; lt; keywordgt; interfaceslt; /keywordgt; lt; keywordgt; martensitic transformations;

机译：转换位错/ keyword keyword不匹配的位错/ keyword keyword晶粒边界/ keyword keyword接口/ keyword keyword马氏体转换;

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1. Shape deformation by moving a glissile interface with one set of misfit dislocations [J] . J.B. Yang, Z.G. Yang, Y. Nagai Philosophical Magazine Letters . 2009,第10期

机译：通过移动具有一组错配位错的易弯曲界面来变形
2. Shape deformation by moving a glissile interface with one set of misfit dislocations [J] . J.B. Yang, Z.G. Yang, Y. Nagai Philosophical Magazine Letters . 2009,第10期

机译：通过移动具有一组错配位错的易弯曲界面来变形
3. Shape deformation by moving a glissile interface with one set of misfit dislocations [J] . J.B. Yang, Z.G. Yang, Y. Nagai Philosophical Magazine Letters . 2009,第10期

机译：通过移动具有一组错配位错的易弯曲界面来变形
4. Distribution of Misfit Dislocations at the lnGaAs/GaAs(001) Interface Observed by Monochromatic X-ray Topography [C] . Hidetoshi Suzuki, Takuo Sasaki, Susumu Yamamoto, Defects-recognition, imaging and physics in semiconductors XIV. . 2012

机译：单色X射线形貌在lnGaAs / GaAs（001）界面上错配位错的分布
5. Structural, electrical characterization and simulation of periodic misfit dislocation arrays localized at the gallium antimonide/gallium arsenide interface [D] . Jallipalli, Anitha 2008

机译：位于锑化镓/砷化镓界面的周期性错配位错阵列的结构，电学表征和模拟
6. Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots? [O] . Zi-Bin Chen, Wen Lei, Bin Chen, 2012

机译：失配位错能否位于InAs / GaAs（001）外延量子点的界面上方？
7. Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si/Si0.8Ge0.2 [O] . Yuan X. L., Sekiguchi T., Niitsuma J., 2005

机译：SiGe梯度层中位错的不均匀分布及其对应变Si / Si0.8Ge0.2界面处的表面形态和失配位错的影响
8. Criterion for Arrest of a Threading Dislocation in a Strained Epitaxial Layer Dueto an Interface Misfit Dislocation in Its Path [R] . Freund, L. B. 1990

机译：应变外延层中线程位错逮捕的判据及其路径中的界面错配位错

Shape deformation by moving a glissile interface with one set of misfit dislocations

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