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首页> 外文期刊>Philosophical Magazine Letters >Unusual stress behaviour of CeO2-doped diamond-like carbon nanofilms
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Unusual stress behaviour of CeO2-doped diamond-like carbon nanofilms

机译：CeO2掺杂类金刚石纳米碳膜的异常应力行为

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摘要

CeO2-doped diamond-like carbon (DLC) films with thicknesses of 180-200 nm were deposited by unbalanced magnetron sputtering. When the CeO2 concentration is in the range 5-8%, the residual compressive stress of the deposited films is reduced by 90%, e.g. from about 4.1 GPa to 0.5 GPa, whereas their adhesion strength increases. These effects are attributed to the dissolution of CeO2 within the DLC amorphous matrix and a widening interface between the DLC film and the Si substrate, respectively.
机译：通过不平衡磁控溅射沉积厚度为180-200 nm的CeO2掺杂的类金刚石碳（DLC）膜。当CeO 2的浓度在5-8％的范围内时，沉积膜的残余压应力降低了90％，例如降低了90％。从约4.1GPa到0.5GPa，而它们的粘合强度增加。这些效应分别归因于CeO2在DLC非晶质基质中的溶解以及DLC膜与Si衬底之间的扩展界面。

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