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首页> 外文期刊>Philosophical Magazine Letters >Characterizing dislocation structures in bulk fatigued copper single crystals using electron channelling contrast imaging (ECCI)
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Characterizing dislocation structures in bulk fatigued copper single crystals using electron channelling contrast imaging (ECCI)

机译:使用电子通道对比成像(ECCI)表征块体疲劳铜单晶中的位错结构

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摘要

Fatigue of copper single crystals, oriented for single slip, has been studied using electron channelling contrast imaging (ECCI) in a scanning electron microscope. This technique was used to detect and characterize dislocation structures in bulk specimens. With the incident beam set at the Bragg condition, changes in the backscattered electron intensity occur as the beam is scanned over dislocations which cause a local tilting of the diffraction planes. ECCI observations on specimens fatigued up to the saturation plateau (resolved shear stress = 28 MPa) show that the dislocation substructures, principally ladder structures and elongated cells, are identical to those observed using transmission electron microscopy on thin foils. One of the main advantages of the ECCI technique is that one can follow all stages of the formation and evolution of dislocation structures over large areas in the same bulk specimen during fatigue interrupted at different stages of the fatigue life. ECCI should prove a powerful tool for investigating dislocation configurations at crack tips or at extrusions/intrusions or persistent slip band systems.
机译:定向单滑动的铜单晶的疲劳已在扫描电子显微镜中使用电子通道对比成像(ECCI)进行了研究。该技术用于检测和表征大块标本中的位错结构。在将入射光束设置为布拉格条件的情况下,当在位错上扫描电子束时会发生反向散射电子强度的变化,从而导致衍射平面局部倾斜。 ECCI对疲劳到饱和平台(解析剪切应力= 28 MPa)的样品的观察表明,位错亚结构(主要是梯形结构和细长单元)与使用透射电子显微镜在薄箔上观察到的相同。 ECCI技术的主要优点之一是,在疲劳寿命的不同阶段中断的疲劳过程中,可以跟踪同一块试样中大面积位错结构的形成和演化的所有阶段。 ECCI应该被证明是一种用于研究裂纹尖端或挤压/挤压或持久滑移带系统中的位错构造的强大工具。

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