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首页> 外文期刊>Philosophical Magazine Letters >Effect of Sn addition on the photoconductivity of narrow-gap Sb_2Se_3 films
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Effect of Sn addition on the photoconductivity of narrow-gap Sb_2Se_3 films

机译：添加Sn对窄间隙Sb_2Se_3薄膜光电导性的影响

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Steady state and transient photocurrent measurements have been performed on thermally evaporated Sb_2Se_3:Sn films. The DC conductivity increases accompanied by a decrease in the DC activation energy and the pre-exponential factor with increasing Sn content. A red shift in the reflectivity maxima was observed with an increase in Sn concentration. Sn addition inhibits photodegradation with a decrease in the photosensitivity. The transient decay process fits well to a stretched exponential function. Values of fit parameters, decay time constant, and the dispersion parameter are reported for the Sb_2Se_3: Sn system. Bimolecular recombination is predominant for the Sb_2Se_3 films, while it changes towards a monomolecular process with increase in the Sn content. An increase in the density of hole trapping centers with the inclusion of Sn as a charged entity is proposed to explain the results.
机译：已对热蒸发的Sb_2Se_3：Sn膜进行了稳态和瞬态光电流测量。随着Sn含量的增加，DC电导率增加，同时DC活化能和预指数因子降低。随着锡浓度的增加，反射率最大值出现红移。锡的添加抑制了光降解，同时光敏性降低。瞬态衰减过程非常适合拉伸的指数函数。报告了Sb_2Se_3：Sn系统的拟合参数，衰减时间常数和色散参数的值。 Sb_2Se_3薄膜主要是双分子复合的，而随着Sn含量的增加，分子复合发生单分子重组。提出以Sn作为带电实体来增加空穴俘获中心的密度以解释该结果。

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