Recombination kinetics of very-long-lived photoluminescence decay in a-Si : H correlated with light-induced spin densities

Aoki T; Ikeda K; Kobayashi S; Shimakawa K

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Recombination kinetics of very-long-lived photoluminescence decay in a-Si : H correlated with light-induced spin densities

机译：a-Si：H中超长寿命光致发光衰减的重组动力学与光诱导的自旋密度相关

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摘要

We have observed photoluminescence (PL) decay persisting for more than 10(4) s at low temperatures in hydrogenated amorphous Si (a-Si: H). The very-long-lived PL decay was identified by the third peak in the lifetime distribution using frequency-resolved spectroscopy. This residual PL decay fits the derivative of a stretched exponential function and its time integral agrees with light-induced electron spin resonance (LESR) densities. At low temperatures and low generation rates, the monomolecular distant-pair reaction dominates the recombination kinetics at extremely long times after stopping the illumination.

机译：我们已经观察到在低温下氢化非晶硅（a-Si：H）的光致发光（PL）衰减持续超过10（4）s。使用频率分辨光谱法，通过寿命分布中的第三个峰确定了寿命很长的PL衰减。该残留的PL衰减适合于扩展的指数函数的导数，并且其时间积分与光诱导的电子自旋共振（LESR）密度一致。在低温和低生成速率下，单分子远距离对反应在停止照明后的极长时间内主导了重组动力学。

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《Philosophical Magazine Letters》 |2006年第3期|共9页
作者
Aoki T; Ikeda K; Kobayashi S; Shimakawa K;
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正文语种 eng
中图分类物理学;
关键词
FREQUENCY-RESOLVED SPECTROSCOPY; HYDROGENATED AMORPHOUS-SILICON; DISTANT-PAIR RECOMBINATION; NON-GEMINATE RECOMBINATION; GE-H; RADIATIVE RECOMBINATION; LIFETIME DISTRIBUTION; LOW-TEMPERATURES; SEMICONDUCTORS; LUMINESCENCE;

机译：分辨光谱;加氢非晶硅;远程对重组;非基元重组;GE-H;辐射重组;寿命分布;低温;半导电;发光;

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专利

1. Recombination kinetics of very-long-lived photoluminescence decay in a-Si : H correlated with light-induced spin densities [J] . Aoki T, Ikeda K, Kobayashi S, Philosophical Magazine Letters . 2006,第3期

机译：a-Si：H中超长寿命光致发光衰减的重组动力学与光诱导的自旋密度相关
2. Exciton decay in Cu2O at high density and low temperature: Auger recombination, spin-flip scattering, and molecule formation [J] . Jang JI, Wolfe JP Solid State Communications . 2006,第1a2期

机译：高密度和低温下Cu2O中的激子衰减：俄歇复合，自旋翻转散射和分子形成
3. Thermal quenching of defect photoluminescence and recombination rates of electron-hole pairs in a-Si:H [J] . Ogihara C., Inagaki Y., Taketa A., Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2012,第17期

机译：缺陷光致发光的热猝灭和a-Si：H中电子-空穴对的重组速率
4. Light-induced Creation of Defects and Lifetime Distribution of Photoluminescence in a-Si:H Based Films [C] . Chisato Ogihara, Hitoshi Takemura, Kazuo Morigaki Symposium on Amorphous and Heterogeneous Silicon-Based Films-2001, Apr 16-20, 2001, San Francisco, California . 2001

机译：基于a-Si：H的薄膜中光诱导的缺陷产生和光致发光的寿命分布
5. Time-resolved photoluminescence spectroscopy for measuring excited-state decay kinetics at silica/solution interfaces [D] . Shield, Stephanie Renee 1998

机译：时间分辨光致发光光谱法，用于测量二氧化硅/溶液界面的激发态衰减动力学
6. Mechanisms of Calcium Decay Kinetics in Hippocampal Spines: Role of Spine Calcium Pumps and Calcium Diffusion through the Spine Neck in Biochemical Compartmentalization [O] . Ania Majewska, Edward Brown, Jonathan Ross, 2000

机译：钙衰变动力学在海马棘中的机制：脊柱钙泵和钙扩散通过脊柱颈在生化分隔中的作用
7. Stretched-exponential a-Si:H∕c-Si interface recombination decay [O] . Stefaan De Wolf, Sara Olibet, Christophe Ballif 2008

机译：拉伸指数A-Si：H / C-Si接口复合衰减
8. Dependence of Recombination Kinetics on Photoexcitation Density in a-Si:H [R] . Wake, D. R., Amer, N. M. 1983

机译：重组动力学对a-si：H中光激发密度的依赖性

Recombination kinetics of very-long-lived photoluminescence decay in a-Si : H correlated with light-induced spin densities

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