Characterization of Ga_(1-x)Mn_xAs/(001)GaAs epilayers grown by low-temperature molecular beam epitaxy

M. W. FAY; Y. HAN; P. D. BROWN

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Characterization of Ga_(1-x)Mn_xAs/(001)GaAs epilayers grown by low-temperature molecular beam epitaxy

机译：低温分子束外延生长的Ga_（1-x）Mn_xAs /（001）GaAs外延层的表征

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Ga_(1-x)Mn_xAs/(001) GaAs (x = 2.2, 5.6, 9 at. percent) epitaxial layers grown by low-temperature MBE, exhibiting anisotropic magnetic properties, have been characterized using a range of transmission electron microscopy techniques and secondary-ion mass spectrometry. Banded contrast features on inclined {111}_B planes are observed for the [110] projection of micron-thick samples with high Mn content, and are attributed to a compositional fluctuation in the interstitial Mn content. Precipitates attributed to tetragonally distorted MnAs are associated with the onset of stacking-fault formation during layer growth. The formation of an Mn-O layer at the surface of the samples is also observed, attributed to post-growth oxidation of an Mn surfactant layer.

机译：已通过一系列透射电子显微镜技术对通过低温MBE生长的Ga_（1-x）Mn_xAs /（001）GaAs（x = 2.2、5.6、9 at。％）外延层表现出各向异性的磁性进行了表征。二次离子质谱对于具有高Mn含量的微米厚样品的[110]投影，在倾斜的{111} _B平面上观察到带状对比度特征，这归因于间隙Mn含量的成分波动。 MnAs呈四边形变形的沉淀与层生长期间堆积断层形成的开始有关。还观察到在样品表面上形成了Mn-O层，这归因于Mn表面活性剂层的后生长氧化。

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《Philosophical Magazine Letters》 |2006年第6期|共7页
作者
M. W. FAY; Y. HAN; P. D. BROWN;
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1. Characterization of Ga_(1-x)Mn_xAs/(001)GaAs epilayers grown by low-temperature molecular beam epitaxy [J] . M. W. FAY, Y. HAN, P. D. BROWN Philosophical Magazine Letters . 2006,第6期

机译：低温分子束外延生长的Ga_（1-x）Mn_xAs /（001）GaAs外延层的表征
2. Optical Characterization of Heavily Sn-Doped GaAs_(1-x)Sb_x Epilayers Grown by Molecular Beam Epitaxy on (001) GaAs Substrates [J] . Fumio NISHINO, Tatsuya TAKEI, Ariyuki KATO, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第1B期

机译：（001）GaAs衬底上分子束外延生长重掺杂Sn的GaAs_（1-x）Sb_x外延层的光学表征
3. Characterization of Ga1-xMnxAs/(001)GaAs epilayers grown by low-temperature molecular beam epitaxy [J] . Fay MW, Han Y, Brown PD, Philosophical Magazine Letters . 2006,第6期

机译：低温分子束外延生长的Ga1-xMnxAs /（001）GaAs外延层的表征
4. Structural characterization of In_(1-x)Mn_xAs and Ga_(1-x)Mn_xAs epitaxial mangnetic films grown by MBE on GaAs [C] . H Bender, A Van Esch, W Van Roy, Institute of Physics Conference on Microscopy and Semiconducting Materials . 1995

机译：由MBE在GaAs上生长的in_（1-x）mn_xas和ga_（1-x）外延膜的结构表征
5. Electrical characterization of nonstoichiometric GaAs grown at low temperature by molecular beam epitaxy. [D] . Ibbetson, James Paul. 1997

机译：分子束外延在低温下生长的非化学计量砷化镓的电学表征。
6. Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy [O] . Xian Gao, Zhipeng Wei, Fenghuan Zhao, -1

机译：分子束外延生长GaAsSb外延层中的局部状态研究
7. Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy [O] . D. Benyahia, Ł. Kubiszyn, K. Michalczewski, 2016

机译：通过分子束外延对GaAs（001）上的GaAsB中的低温生长

Characterization of Ga_(1-x)Mn_xAs/(001)GaAs epilayers grown by low-temperature molecular beam epitaxy

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