A triple-node intrinsic stacking faultanotwin/extrinsic stacking fault in a small GaAs island grown on a Si (001) substrate

M. Loubradou; R. Bonnet; A. Vila

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A triple-node intrinsic stacking faultanotwin/extrinsic stacking fault in a small GaAs island grown on a Si (001) substrate

机译：在Si（001）衬底上生长的小GaAs岛中的三节点本征堆叠断层/纳特温/本征堆叠断层

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The defect content of small GaAs islands grown by molecular-beam epitaxy on a Si (001) substrate is investigated using high-resolution electron microscopy. The smallest non-defect-free islands contain stair-rod dislocations (SRDs) with Burgers vectors 1/6[110] or 1/3 [110] linked to intrinsic stacking faults (ISFs) or extrinsic stacking faults (ESFs). When two SRDs are simutaneously present, they can interact to form an ultrathin twin in GaAs so that a triple-line ISFanotwin/ESF can form, along which an edge 1/3[001] dislocation is present. A mechanism is proposed to interpret the triple node, based on the formation of planar defects produced by emission from the free surface.

机译：使用高分辨率电子显微镜研究了通过分子束外延在Si（001）衬底上生长的小GaAs岛的缺陷含量。最小的无缺陷岛包含带有与固有堆垛层错（ISF）或外部堆垛层错（ESF）相关的Burgers矢量1/6 [110]或1/3 [110]的楼梯杆错位（SRD）。当同时存在两个SRD时，它们可以相互作用形成GaAs中的超薄孪晶，从而可以形成三线ISF / nanotwin / ESF，沿其存在1/3 [001]边缘。提出了一种机制的解释，该解释是基于自由表面发射产生的平面缺陷的形成来解释三重节点。

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《Philosophical Magazine Letters》 |1996年第1期|共8页
作者
M. Loubradou; R. Bonnet; A. Vila;
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1. A triple-node intrinsic stacking faultanotwin/extrinsic stacking fault in a small GaAs island grown on a Si (001) substrate [J] . M. Loubradou, R. Bonnet, A. Vila Philosophical Magazine Letters . 1996,第1期

机译：在Si（001）衬底上生长的小GaAs岛中的三节点本征堆叠断层/纳特温/本征堆叠断层
2. Formation of stacking faults in ZnS thin films epitaxially grown on GaAs(001) [J] . Arnold M, Wang ZL, Tong W, Philosophical Magazine, A. Physics of condensed matter, defects and mechanical properties . 1997,第5期

机译：在GaAs（001）上外延生长的ZnS薄膜中的堆叠缺陷形成
3. Transmission electron microscopy study of stacking-fault trapezoids and stacking-fault tubes in ZnSe/GaAs(001) pseudomorphic epitaxial layers [J] . N. Wang, I. K. Sou, K. K. Fung Philosophical Magazine Letters . 1997,第3期

机译：ZnSe / GaAs（001）拟晶外延层中的断层梯形和断层管的透射电镜研究
4. Impact of the threading dislocations and residual stress on InAs islands grown on a (001) GaAs-on-Si pseudo-substrate relative to growth on standard GaAs [C] . D Lacombe, A Ponchet, J M Gerard Royal Microscopical Society conference on microcopy of semiconducting materials . 1997

机译：相对于在标准GaAs上的生长，螺纹位错和残余应力对在（001）GaAs-on-Si伪衬底上生长的InAs岛的影响
5. A first-principles study of stacking faults and long periodic stacking order structures in Mg and Mg alloys [D] . Wang, Yi. 2013

机译：Mg和Mg合金堆垛层错和长周期堆垛有序结构的第一性原理研究
6. Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction [O] . Arman Davtyan, Sebastian Lehmann, Dominik Kriegner, -1

机译：纳米束X射线衍射表征纤锌矿GaAs纳米线中的单个堆垛层错
7. Transmission Electron Microscopy of Vertically Stacked ErAs-InAs Semimetal -Quantum Dot Nanocomposite Heterostructures Grown on GaAs(001) Substrates [O] . Krishnamurthy Mahalingam, Yuanchang Zhang, Kurt Eyink, 2017

机译：在GaAs（001）基板上生长的垂直堆叠的替代矩形矩阵半型喹系纳米复合异质结构的透射电子显微镜

A triple-node intrinsic stacking faultanotwin/extrinsic stacking fault in a small GaAs island grown on a Si (001) substrate

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