Misfit dislocations in laser-ablated heteroepitaxial YBa_2Cu_3O_(7-δ) on MgO(001)

M. Aindow; D. J. Norris; T. T. Cheng

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Misfit dislocations in laser-ablated heteroepitaxial YBa_2Cu_3O_(7-δ) on MgO(001)

机译：MgO（001）上激光烧蚀异质外延YBa_2Cu_3O_（7-δ）的错配位错

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High-resolution electron microscopy has been used to show that for epitaxial YBa2Cu3O7-delta thin films on MgO(001) with the '0 o' orientation, the interface between the substrate and deposit is semicoherent, rather than 'graphoepitaxial' as proposed previously. The misfit is accommodated by arrays of misfit dislocations with Burgers vectors 1/2 110 , line directions 110 and a regular spacing of 3.3 nm.

机译：高分辨率电子显微镜已显示出，对于MgO（001）取向为'0 o'的外延YBa2Cu3O7-delta薄膜，衬底与沉积物之间的界面是半相干的，而不是先前提出的“石墨外延”的。失配由具有Burgers矢量1/2 110，线方向110和3.3 nm规则间距的失配位错阵列解决。

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《Philosophical Magazine Letters》 |1996年第4期|共6页
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M. Aindow; D. J. Norris; T. T. Cheng;
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1. Misfit dislocations in laser-ablated heteroepitaxial YBa_2Cu_3O_(7-δ) on MgO(001) [J] . M. Aindow, D. J. Norris, T. T. Cheng Philosophical Magazine Letters . 1996,第4期

机译：MgO（001）上激光烧蚀异质外延YBa_2Cu_3O_（7-δ）的错配位错
2. Measurement of epitaxial misorientations and related effects in thin films of YBa_2Cu_3O_(7-δ) grown on nominally (001)MgO substrates by pulsed laser deposition [J] . D.J. Norris, M. Aindow Thin Solid Films . 2003,第1期

机译：通过脉冲激光沉积法测量在名义上（001）MgO衬底上生长的YBa_2Cu_3O_（7-δ）薄膜中外延取向和相关效应
3. Misfit dislocation network at the Ag/MgO(001) interface: A grazing-incidence x-ray-scattering study [J] . Renaud G., Barbier A., Guenard P. Physical Review, B. Condensed Matter . 1998,第11期

机译：Ag / MgO（001）界面处的错位错位网络：掠入射X射线散射研究
4. Investigation of the influence of Al-doping on the microstructures of laser-ablated epitaxial YBa_2Cu_3O_(7-δ) thin films on (001) MgO [C] . M. Yeadon, P.J. Hirst, K.R. Locherer, Institute of Physics Electron Microscopy and Analysis Group conference . 1995

机译：Al掺杂对（001）MgO上激光烧蚀外延YBa_2Cu_3O_（7-δ）薄膜微观结构的影响
5. Growth and investigation of the Slater-Pauling behavior by X-ray characterization of single crystal bcc FexMn1-x on MgO(001). [D] . Bhatkar, Harshawardhan Ramesh. 2015

机译：通过在MgO（001）上单晶bcc FexMn1-x的X射线表征对Slater-Pauling行为进行生长和研究。
6. Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots? [O] . Zi-Bin Chen, Wen Lei, Bin Chen, 2012

机译：失配位错能否位于InAs / GaAs（001）外延量子点的界面上方？
7. Accommodation of the misfit strain energy in the BaO(100)/MgO(100) heteroepitaxial ceramic interface using computer simulation techniques [O] . Sayle D.C., Parker S.C., Harding J.H. 1994

机译：使用计算机仿真技术在BaO（100）/ MgO（100）异质外延陶瓷界面中适应失配应变能
8. Reorientation of misfit dislocations during annealing in InGaAs/GaAs(001) interfaces [R] . Chen, Y., Liliental-Weber, Z., Washburn, J., 1993

机译：在InGaas / Gaas（001）界面退火过程中失配位错的重新定向

Misfit dislocations in laser-ablated heteroepitaxial YBa_2Cu_3O_(7-δ) on MgO(001)

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