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Breaking AB stacking order in graphite oxide: ab initio approach

机译:从头开始方法打破氧化石墨中的AB堆积顺序

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Different bulk structures of graphite oxide were systematically investigated using density functional theory (DFT). Our model consisted of a hexagonal in-plane structure of graphene with hydroxyl and epoxide groups, and different oxidation levels and water content. The graphitic AB stacking order was stable in anhydrous graphite oxide, independent of oxidation levels. The hydrogen bonding interaction of layers became weaker as the oxidation level increased to the saturation limit. When water molecules were present in highly oxidized graphite oxide, the AB stacking order was broken due to entropic disorder. The interlayer distances increased with the oxidation level: the interlayer distance was 5.1 A for low oxidation graphite oxide and 5.8 A for high oxidation graphite oxide. The calculated interlayer distance of hydrated graphite oxide was 7.3 A, which is in excellent agreement with experimental observations.
机译:使用密度泛函理论(DFT)系统地研究了不同的本体氧化石墨结构。我们的模型由具有羟基和环氧基的石墨烯六角形面内结构以及不同的氧化水平和水含量组成。石墨AB堆积顺序在无水氧化石墨中稳定,与氧化程度无关。随着氧化水平增加到饱和极限,层的氢键相互作用变弱。当水分子存在于高度氧化的氧化石墨中时,由于熵混乱,AB堆积顺序被破坏。层间距离随氧化水平而增加:对于低氧化石墨氧化物,层间距离为5.1 A,对于高氧化石墨氧化物,层间距离为5.8A。计算得出的水合氧化石墨的层间距离为7.3 A,与实验观察结果非常吻合。

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