Optical spectroscopy in the visible (300-1100 MI) and in the infrared (400-4000 cm(-1)) regions was used to monitor the relaxation and crystallization processes of pure amorphous silicon carbide (a-SiC) thin films upon annealing at temperatures between 200 and 1000 degrees C. These films were obtained by ion implantation of crystalline material with 200 keV Kr+ at a fluence of 2 x 10(15) ions cm(-2). The refractive index n and the absorption index k were calculated from the ultraviolet-visible transmittance and reflectance, and information on the vibration modes of the SI-C bonds was detected from infrared transmittance. Thermal treatment changes the optical properties of a-SiC; in particular, annealing at temperatures lower than 800 degrees C resulted in a continuous variation in both the refractive index and the absorption index and in a decrease in the infrared silicon-carbon peak width. Annealing at higher temperatures produces sudden variations in the shape of the refractive index and in the infrared silicon-carbon peak. These trends allowed us to identify the occurrence of two processes: relaxation of the amorphous phase at low temperatures and crystallization at temperatures higher than 800 degrees C.
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机译：可见光（300-1100 MI）和红外光（400-4000 cm（-1））区域中的光谱用于监测纯无定形碳化硅（a-SiC）薄膜在110℃退火时的弛豫和结晶过程。温度在200到1000摄氏度之间。这些薄膜是通过以2 x 10（15）离子cm（-2）的通量对200 keV Kr +的晶体材料进行离子注入而获得的。由紫外可见透射率和反射率计算出折射率n和吸收率k，从红外透射率检测出关于SI-C键的振动模式的信息。热处理会改变a-SiC的光学特性;特别地，在低于800℃的温度下退火导致折射率和吸收指数的连续变化以及红外硅碳峰宽的减小。较高温度下的退火会导致折射率形状和红外硅碳峰的突然变化。这些趋势使我们能够确定两个过程的发生：在低温下非晶相的弛豫和在高于800摄氏度的温度下的结晶。
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