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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Study of the contrast in electric force microscopy images of RuO2-based thick-film resistors
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Study of the contrast in electric force microscopy images of RuO2-based thick-film resistors

机译：RuO2基厚膜电阻器的电镜图像对比度研究

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The contrast mechanism of electric force microscopy (EFM) operating in static and dynamic modes have been investigated and applied to the clarification of the electrical conduction properties of RuO2-based thick-film resistors. Both the magnetic and the electrical contributions to the overall EFM signal and the corresponding contrast have been analysed and compared by using different types of atomic force microscopy tip (with a magnetic coating and with a Pt/Ir coating). It has been found that the EFM contrast changes on inverting the voltage polarity of the samples. The regions surrounding the RuO2 grains present an EFM signal which is lower for a negative bias than for a positive bias at low values of the applied voltage; this signal difference tends to disappear on increasing the absolute bias value. This behaviour, typical of semiconductors, ascribes to the above regions semiconducting properties. [References: 18]
机译：已经研究了在静态和动态模式下操作的电动显微镜（EFM）的对比机理，并将其用于阐明RuO2基厚膜电阻器的导电特性。通过使用不同类型的原子力显微镜尖端（带有磁性涂层和带有Pt / Ir涂层），已经分析和比较了对整个EFM信号的磁和电影响以及相应的对比度。已经发现，EFM对比度随着样品电压极性的反转而改变。在低电压下，RuO2晶粒周围的区域呈现出的EFM信号对于负偏压要比对正偏压低。随着绝对偏置值的增加，该信号差趋于消失。这种行为，典型的是半导体，归因于上述区域的半导体特性。 [参考：18]

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