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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Two-dimensional variable-range hopping conductivity: influence of the electron-electron interaction
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Two-dimensional variable-range hopping conductivity: influence of the electron-electron interaction

机译：二维变程跳跃电导率：电子-电子相互作用的影响

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摘要

We discuss aspects of a two-dimensional variable-range hopping (VRH) conductivity determined by electron-electron interaction (EEI). The first aspect is connected with existence of a soft 'Coulomb gap' in the density of states (DOS) at the Fermi level. We show that, in the delta -doped GaAs/AlxGa1-xAs heterostructure, a quantitative analysis of the crossover from VRH conductivity governed by the Coulomb gap to VRH conductivity of noninteracting carriers allows one to determine the DOS near the Fermi level. The other phenomena consist in observation of a universal hopping pre-factor rho (0) equal to the quanta of two-dimensional resistance R-Q = h/e(2) = 25.8 k Omega. This is interpreted as evidence that, at electron densities near the metal-insulator transition, the conductivity is determined by EEI-assisted transitions rather than by the conventional mechanism of phonon-assisted hopping. The EEI mechanism is destroyed in strong parallel magnetic fields, which shows the important role of spin-spin correlations in the above effect. [References: 42]
机译：我们讨论了由电子-电子相互作用（EEI）确定的二维可变范围跳跃（VRH）电导率的各个方面。第一个方面与费米能级的态密度（DOS）中存在软“库仑间隙”有关。我们表明，在δ掺杂的GaAs / AlxGa1-xAs异质结构中，从由库仑间隙控制的VRH电导率到非相互作用载流子的VRH电导率的转换的定量分析，可以确定费米能级附近的DOS。其他现象包括观察到通用跳变预因子rho（0）等于二维电阻R-Q = h / e（2）= 25.8 k Omega的量子。这被解释为证据，表明在金属-绝缘体跃迁附近的电子密度下，电导率是由EEI辅助跃迁确定的，而不是由声子辅助跃变的常规机制确定的。 EEI机制在强平行磁场中被破坏，这表明自旋-自旋相关在上述效应中起着重要作用。 [参考：42]

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