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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Amorphous transparent conductive oxide InGaO3(ZnO)(m) (m <= 4): a Zn 4s conductor
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Amorphous transparent conductive oxide InGaO3(ZnO)(m) (m <= 4): a Zn 4s conductor

机译：非晶透明导电氧化物InGaO3（ZnO）（m）（m <= 4）：Zn 4s导体

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With the purpose of creating ZnO-based amorphous transparent conductors, a range of amorphous films InGaO3(ZnO)(m) (where m less than or equal to 4) was prepared using a pulsed-laser deposition method. The resulting films exhibited an optical bandgap of 2.8-3.0eV, and an n-type electric conductivity of 170-400S cm(-1) at room temperature, displaying a slight dependence on the value of m, in which the carrier density was 10(19)-10(20) cm(-3) the electron mobility was 12-20 cm(2) V-1 s(-1) showing no p-n anomaly between Hall and Seebeck coefficients. The conductivity; displayed no significant dependence on the temperature ranging from 10 to 300 K. X-ray diffraction, transmission electron microscopy and extended X-ray absorption fine structure measurements confirmed that the films were amorphous phases. A combined use of bremsstrahlung isochromat spectroscopy and ultraviolet photoelectron spectroscopy revealed that the conduction band tail had a large dispersion and that the Fermi level was located at the conduction band edge. The percolation theory and overlap integral calculations suggest that the extended conduction band of the amorphous metal oxides are formed when the (n - 1)d(10) ns(0) metal ions (n being the principal quantum number) occupy more than 20% of the atoms and the overlap integral between the vacant ns orbitals exceeds a threshold value of approximately 0.4. The present system is the first amorphous oxide semiconductor in which Zn 4s orbitals form the extended conduction band. [References: 23]
机译：为了产生基于ZnO的非晶态透明导体，使用脉冲激光沉积法制备了一系列非晶膜InGaO3（ZnO）（m）（其中m小于或等于4）。所得薄膜在室温下的光学带隙为2.8-3.0eV，n型电导率为170-400S cm（-1），对载流子密度为10的m值有轻微的依赖性。 （19）-10（20）cm（-3）的电子迁移率是12-20 cm（2）V-1 s（-1），显示霍尔系数和塞贝克系数之间没有pn异常。电导率;显示出对温度范围从10到300 K没有显着依赖。X射线衍射，透射电子显微镜和扩展的X射线吸收精细结构测量证实了膜是非晶相。致辐射等色光谱法和紫外光电子能谱法的结合使用表明，导带尾部具有较大的色散，并且费米能级位于导带边缘。渗流理论和重叠积分计算表明，当（n-1）d（10）ns（0）金属离子（n为主要量子数）占据20％以上时，形成了非晶态金属氧化物的扩展导带。原子的原子数和空的ns轨道之间的重叠积分超过大约0.4的阈值。本系统是其中Zn 4s轨道形成扩展的导带的第一非晶氧化物半导体。 [参考：23]

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