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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Composition dependence of positron states in zincblende Ga1-xInxN
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Composition dependence of positron states in zincblende Ga1-xInxN

机译：闪锌矿Ga1-xInxN中正电子态的组成依赖性

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摘要

The positron states in the ternary alloys Ga1-xInxN in the zincblende structure in the range from x = 0 to x = 1 have been investigated. The electron wavefunction is calculated using the pseudopotential band model within the virtual-crystal approximation. To make allowance for the compositional disorder, a correction to the alloy potential has been introduced. The positron wavefunction is evaluated under the point-core approximation for the ionic potential. The shapes of the profiles indicate that the integrated electron-positron momentum densities along different crystallographic directions become less flat in going from GaN to InN through the equimolar alloy Ga0.50In0.50N. Moreover, a nonlinear dependence of the positron bulk lifetime was found as the In concentration is increased. These results reflect the change of positron annihilation characteristics with the composition in III-V nitride semiconductor alloys. [References: 46]
机译：研究了闪锌矿结构的三元合金Ga1-xInxN中的正电子态，范围从x = 0到x = 1。电子波函数是使用虚拟晶体近似中的伪势能带模型计算的。为了考虑到成分的混乱，已经引入了对合金电位的校正。在离子电势的点芯近似下评估正电子波函数。轮廓的形状表明，沿着GaN到InN的等摩尔合金Ga0.50In0.50N，沿不同晶体学方向的积分电子-正电子动量密度变得不太平坦。此外，发现随着In浓度的增加，正电子本体寿命的非线性相关性。这些结果反映了III-V族氮化物半导体合金中正电子an灭特性随组成的变化。 [参考：46]

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