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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Electron correlation effects at variable-range hopping in doped GaAs, CdTe, Ge and Si
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Electron correlation effects at variable-range hopping in doped GaAs, CdTe, Ge and Si

机译：GaAs，CdTe，Ge和Si的变程跳变中的电子相关效应

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We report low-temperature electrical resistivity and magnetoresistivity measurements of doped semiconductors below the critical concentration of the metal-insulator transition. The series of samples were chemically doped (CdTe and Si) or were obtained by the neutron transmutation doping technique (GaAs and Ge). The resistivity was measured in the temperature range T = 0.03-42 K. All samples show, at the lowest temperatures. variable-range hopping resistivity rho (T) = rho (0) exp [(T-0/T)(s)] with s = 1/2. Comparison of the experimentally determined To with the theoretical single-electron value of Efros and Shklovskii. T-0 T-ES0 = 2.8e(2)/k(B)a(B)K(0), shows that multiple-electron transitions are dominant at all compensations except K greater than or equal to 0.7. where a large scale potential relief exists. In this case the single-electron approach seems to be a good approximation. [References: 53]
机译：我们报告了低于金属-绝缘体转变的临界浓度的掺杂半导体的低温电阻率和磁阻测量值。该系列样品是化学掺杂的（CdTe和Si）或通过中子trans变掺杂技术（GaAs和Ge）获得的。在T = 0.03-42 K的温度范围内测量电阻率。所有样品均显示在最低温度下。可变范围跳变电阻率rho（T）= rho（0）exp [（T-0 / T）（s）]，其中s = 1/2。实验确定的To与Efros和Shklovskii的理论单电子值的比较。 T-0 T-ES0 = 2.8e（2）/ k（B）a（B）K（0）表明，在所有补偿下，除K大于或等于0.7外，多电子跃迁均占主导地位。存在大规模潜在救济的地方。在这种情况下，单电子方法似乎是一个很好的近似。 [参考：53]

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