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Frequency-resolved photoconductivity studies in amorphous As-Se-Sb

机译:非晶态As-Se-Sb的频率分辨光电导研究

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摘要

Frequency-resolved photocurrent measurements were carried out on amorphous As-Se-Sb films as a function of temperature (between 230 and 395K) and of excitation intensity (between 40 and 600 muW), yielding the lifetime distribution directly. Since the lifetime does depend on the excitation intensity, the results indicate that the recombination is through distant pairs, rather than by geminate (twin) pairs. [References: 11]
机译:对非晶态As-Se-Sb薄膜进行频率分辨的光电流测量,该薄膜是温度(介于230和395K之间)和激发强度(介于40和600μW之间)的函数,直接产生寿命分布。由于寿命确实取决于激发强度,因此结果表明重组是通过远距离对进行的,而不是通过双胞胎对进行的。 [参考:11]

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