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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopy
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Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopy

机译：使用高分辨率电子显微镜识别与n型GaN和AlxGa1-xN / GaN异质结构的欧姆接触中的界面层

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The optimization of Ohmic contacts to high-power GaN-based electronic devices would be greatly helped by a better understanding of the effects of changes in the microstructure on the contact resistance. To study this, various Al Ti-based Ohmic metallizations to n-GaN and AlxGa1-xN/GaN heterostructures have been examined by transmission electron microscopy (TEM) after annealing in Ar. Although other factors are also important, reaction layers at the metal-nitride interface play a key role in such contacts and hence need to be identified. By far the most convenient means of characterizing such reaction layers is to take fast Fourier transforms (FFTs) of high-quality lattice images and then to compare the measured lattice spacings and angles with selected-area diffraction patterns and with chemical information obtained using energy-dispersive X-ray analysis or energy-filtered TEM. Lattice imaging provides essential information both on the identification of phases and on their morphology and distribution, and the FFT technique maximizes the accuracy of d-spacing measurements. The benefits and difficulties of these techniques are described, and TEM results illustrating the range of observed interfacial phases, including TiN, AIN and AlTi2N, are presented. Whether variations in the specific contact resistance can be explained by changes in the metal-nitride interfacial phase is then discussed. [References: 16]
机译：通过更好地了解微观结构变化对接触电阻的影响，可以极大地帮助优化高功率GaN基电子器件的欧姆接触。为了研究这一点，在Ar中退火后，通过透射电子显微镜（TEM）研究了各种以n-GaN和AlxGa1-xN / GaN异质结构为基础的Al Ti基欧姆金属。尽管其他因素也很重要，但金属氮化物界面处的反应层在此类接触中起着关键作用，因此需要确定。到目前为止，表征此类反应层的最便捷方法是对高质量晶格图像进行快速傅立叶变换（FFT），然后将所测得的晶格间距和角度与选定区域的衍射图以及使用能量获得的化学信息进行比较。色散X射线分析或能量过滤TEM。晶格成像可提供有关相识别及其形态和分布的基本信息，而FFT技术可最大程度地提高d间隔测量的准确性。描述了这些技术的优点和困难，并给出了TEM结果，说明了观察到的界面相的范围，包括TiN，AlN和AlTi2N。然后讨论了是否可以通过金属-氮化物界面相的变化来解释比接触电阻的变化。 [参考：16]

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