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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Electrochemical breakdown in thin Nb2O5 films
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Electrochemical breakdown in thin Nb2O5 films

机译：Nb2O5薄膜中的电化学击穿

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Observations are presented on breakdown during the galvanostatic growth of niobium pentoxide in acid medium. The role played by electrolyte parameters, such as acid concentration and transport through the solution of electron donor species, is examined. The intrinsic properties of the oxide film and a correlation between the inner film and its thickness are discussed with regard to impact ionization and the avalanche breakdown model. Experiments using electrochemical copper reduction on the surface of the film suggest that electronic conduction through filamentary high conduction paths is responsible for the localization of the observed breakdown spots. [References: 23]
机译：提出了关于在酸性介质中五氧化二铌恒电流生长过程中分解的观察结果。检查了电解质参数（例如酸浓度和通过电子供体物质的溶液的传输）所起的作用。关于冲击电离和雪崩击穿模型，讨论了氧化膜的内在特性以及内膜与其厚度之间的关系。在膜表面使用电化学铜还原的实验表明，通过丝状高传导路径的电子传导是造成观察到的击穿点的局部原因。 [参考：23]

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