Optical and photoluminescence properties of a-Si1-xNx:H/a-Si3N4:H and a-Si1-xCx:H/a-SiC:H superlattices

Giorgis F

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Optical and photoluminescence properties of a-Si1-xNx:H/a-Si3N4:H and a-Si1-xCx:H/a-SiC:H superlattices

机译：a-Si1-xNx：H / a-Si3N4：H和a-Si1-xCx：H / a-SiC：H超晶格的光学和光致发光特性

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Superlattices based on wide-bandgap hydrogenated amorphous silicon based alloys were studied in terms of optical absorption and photoluminescence properties. A critical comparison between a-Si1-xNx:H/a-Si3N4:H and a-Si1-xCx:H/a-SiC:H multilayers was made, revealing the former as a promising structure for electroluminescent devices in the visible range. As evidence of this potentiality, a light-emitting device was realized using an a-Si1-xNx:H/a-Si3N4:H multilayer as the radiative element.

机译：研究了基于宽带隙氢化非晶硅基合金的超晶格的光吸收和光致发光性能。进行了a-Si1-xNx：H / a-Si3N4：H和a-Si1-xCx：H / a-SiC：H多层膜的关键比较，揭示了前者是可见光范围内电致发光器件的有希望的结构。作为这种潜力的证据，使用a-Si1-xNx：H / a-Si3N4：H多层作为辐射元件实现了发光器件。

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《Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties》 |1997年第3期|共12页
作者
Giorgis F;
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正文语种 eng
中图分类物理学;
关键词
A-SI-H; AMORPHOUS-SILICON; SEMICONDUCTORS; MULTILAYERS; ALLOYS;

机译：A-SI-H;非晶硅;半导体;多层;合金;

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1. Optical and photoluminescence properties of a-Si1-xNx:H/a-Si3N4:H and a-Si1-xCx:H/a-SiC:H superlattices [J] . Giorgis F Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties . 1997,第3期

机译：a-Si1-xNx：H / a-Si3N4：H和a-Si1-xCx：H / a-SiC：H超晶格的光学和光致发光特性
2. Photoluminescence and electroluminescence properties of a-Si1-xNx : H based superlattice structures [J] . Summonte C., Galloni R., Giorgis F., Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 1998,第Pta2期

机译：基于a-Si1-xNx：H的超晶格结构的光致发光和电致发光特性
3. Optical properties and room-temperature photoluminescence from Tb3+ ions in a-Si1-xCx : H thin films [J] . Nikolaeva M., Sendova-Vassileva M., Dimova-Malinovska D., Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2002,第1a3期

机译：a-Si1-xCx：H薄膜中Tb3 +离子的光学性质和室温光致发光
4. Investigation of Optical Properties and Photoluminescence of Amorphous Silicon Carbide in a-SiC/Si_3N_4 Quantum Well Structures Fabricated by PECVD Technique [C] . L. Kamyab, Rusli, M. B. Yu, EuroCVD 17/CVD 17 . 2009

机译：PECVD技术制备的a-SiC / Si_3N_4量子阱结构中非晶碳化硅的光学性质和光致发光研究
5. INFRARED OPTICAL STUDIES OF MERCURY-TELLURIDE - CADMIUM-TELLURIDE SUPERLATTICES AND GALLIUM-ARSENIDE (PHOTOLUMINESCENCE, DOUBLE ACCEPTOR, RAMAN SCATTERING, EXCITED STATES, LUMINESCENCE). [D] . HETZLER, STEVEN ROBERT. 1986

机译：碲化汞-碲化镉超晶格和砷化镓的红外光学研究（光致发光，双受主，拉曼散射，激发态，发光）。
6. Optical properties of Ni and Cu nanowire arrays and Ni/Cu superlattice nanowire arrays [O] . Yaya Zhang, Wen Xu, Shaohui Xu, 2012

机译：Ni和Cu纳米线阵列以及Ni / Cu超晶格纳米线阵列的光学性质
7. Etats électroniques localisés dans a-Si1-xCx:H massif et poreux: Spectroscopie IR et photoluminescence. [O] . Rerbal Kamila 2004

机译：位于a-Si1-xCx中的电子状态：块状和多孔H：红外光谱和光致发光。

Optical and photoluminescence properties of a-Si1-xNx:H/a-Si3N4:H and a-Si1-xCx:H/a-SiC:H superlattices

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