Electron paramagnetic resonance studies of intrinsic semiconductor UMo6S8: Evidence for dynamically averaged resonance of U4+ and conduction electrons

Kadam RM; Sastry MD; Iyer RM; Gopalakrishnan IK; Yakhmi JV

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Electron paramagnetic resonance studies of intrinsic semiconductor UMo6S8: Evidence for dynamically averaged resonance of U4+ and conduction electrons

机译：本征半导体UMo6S8的电子顺磁共振研究：U4 +和传导电子的动态平均共振的证据

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Our electron paramagnetic resonance (EPR) investigation of the intrinsic semiconductor UMo6S8 in the temperature range 10-100 K has revealed the resonance due to U4+ with a strong temperature-dependent g shift. This is due to the dynamic averaging of EPR signals between the static 5f(2) state of U4+ and the conduction electrons. The energy gap Delta E(g) between the U 5f levels and the conduction band in UMo6S8 can be estimated from the temperature dependence of the g shift to be 0.0165 eV.

机译：我们对10-100 K温度范围内的本征半导体UMo6S8的电子顺磁共振（EPR）研究表明，由于U4 +具有强烈的温度依赖性g位移，因此产生了共振。这是由于在U4 +的静态5f（2）状态和传导电子之间对EPR信号进行了动态平均。 U 5f能级与UMo6S8中的导带之间的能隙Delta E（g）可以从g位移的温度依赖性估计为0.0165 eV来估计。

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《Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties》 |1997年第4期|共6页
作者
Kadam RM; Sastry MD; Iyer RM; Gopalakrishnan IK; Yakhmi JV;
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正文语种 eng
中图分类物理学;
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CRYSTAL;

机译：水晶;

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Electron paramagnetic resonance studies of intrinsic semiconductor UMo6S8: Evidence for dynamically averaged resonance of U4+ and conduction electrons

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