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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >High-resistivity superconductor-normal-superconductor junctions for an AC Josephson voltage standard
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High-resistivity superconductor-normal-superconductor junctions for an AC Josephson voltage standard

机译：AC Josephson电压标准的高电阻超导体-常态-超导体结

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We report here our results on the development of Nb/Al/Nb Josephson junctions for a programmable voltage standard. The Al barrier is 5-120 nm thick. Its properties are quite different with respect to the single Al films because of diffusion between Al and the Nb counter-electrode. The resistivity of the Al barrier ranges from hundreds of microhm centimetres to a few milliohm centimetres, probably depending on the surface roughness of the Al layer, measured by atomic force microscopy (AFM). The junctions, with areas between 25 and 200 mu m(2) have critical currents I-C in the milliampere range, associated with normal resistances R-N of about 1 Omega. The very high ICRN product of these junctions allows us to use a microwave source of 70 GHz and above, as in present de voltage standards. Preliminary rf measurements on these devices are reported. Structural investigations by AFM and X-ray diffraction were also carried out to relate the electrical properties of the junctions to the Nb-Al interfaces. [References: 12]
机译：我们在这里报告了针对可编程电压标准的Nb / Al / Nb Josephson结的开发结果。 Al阻挡层的厚度为5-120nm。由于铝和Nb对电极之间的扩散，其性能相对于单个Al膜而言是完全不同的。 Al势垒的电阻率范围从数百微欧厘米到几毫欧厘米，这可能取决于通过原子力显微镜（AFM）测量的Al层的表面粗糙度。结的面积在25到200μm（2）之间，临界电流I-C在毫安范围内，与大约1Ω的正常电阻R-N相关。这些结的非常高的ICRN产品使我们能够使用70 GHz以上的微波源，如当前的降压标准一样。报告了在这些设备上的初步射频测量。还进行了原子力显微镜和X射线衍射的结构研究，以将结的电学性质与Nb-Al界面联系起来。 [参考：12]

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