Quantum confinement effects on the band structure and dielectric properties of nanostructured GaAs

Al Wadiy N.H.M.; Bouarissa N.; Ajmal Khan M.

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Quantum confinement effects on the band structure and dielectric properties of nanostructured GaAs

机译：量子约束对纳米结构GaAs的能带结构和介电性能的影响

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The electronic band structure and dielectric properties of a GaAs quantum well have been investigated using the pseudopotential approach. The effect of quantum confinement on the electronic and dielectric properties of GaAs has been examined. It is found that significant variations in the studied properties occur at quantum well widths below 5 nm. The information may be useful in obtaining derived electronic and dielectric properties, which was not possible in the unconfined (bulk) GaAs compound semiconductor.

机译：GaAs量子阱的电子能带结构和介电性能已使用伪电位方法进行了研究。已经研究了量子限制对GaAs的电子和介电性能的影响。发现在小于5nm的量子阱宽度处发生了所研究性质的显着变化。该信息对于获得派生的电子和介电特性可能是有用的，这在无限制（批量）GaAs化合物半导体中是不可能的。

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《Physica Scripta: An International Journal for Experimental and Theoretical Physics》 |2011年第1期|共5页
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Al Wadiy N.H.M.; Bouarissa N.; Ajmal Khan M.;
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1. Quantum confinement effects on the band structure and dielectric properties of nanostructured GaAs [J] . Al Wadiy N.H.M., Bouarissa N., Ajmal Khan M. Physica Scripta: An International Journal for Experimental and Theoretical Physics . 2011,第1期

机译：量子约束对纳米结构GaAs的能带结构和介电性能的影响
2. Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (1 0 0) and (3 1 1)A GaAs surfaces [J] . Louren?o S.A., Teodoro M.D., González-Borrero P.P., Physica, B. Condensed Matter . 2012,第12期

机译：在（1 0 0）和（3 1 1）A GaAs表面上生长的GaAs / AlGaAs多量子阱中的限制势涨落和能带隙归一化对激子跃迁的影响分析
3. Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires [J] . H. Tanaka, N. Morioka, S. Mori, Journal of Applied Physics . 2014,第5期

机译：量子约束对矩形截面GaAs纳米线导带结构的影响
4. Laser properties of 1.35 mu m InGaAs/InGaAsP-separate-confinement-multi-quantum-well-structures [C] . Mohrle, M., Grutzmacher, Indium Phosphide and Related Materials, 1991., Third International Conference. . 1991

机译：1.35μmInGaAs / InGaAsP分离约束多量子阱结构的激光特性
5. The optical and electronic properties of silicon nanostructures with quantum confinement [D] . Lowrie, Christopher Graeff 2007

机译：具有量子限制的硅纳米结构的光学和电子性质
6. Optical quantum confinement and photocatalytic properties in two- one- and zero-dimensional nanostructures [O] . T. Edvinsson 2018

机译：二维一维和零维纳米结构中的光量子限制和光催化性能
7. Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires [O] . Tanaka H., Morioka N., Mori S., 2014

机译：量子约束对矩形截面GaAs纳米线导带结构的影响

Quantum confinement effects on the band structure and dielectric properties of nanostructured GaAs

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