Characterization of Al-implanted 4H SiC high voltage diodes

Kalinina E.; Onushkin G.; Strelchuk A.; Davidov D.; Kossov V.; Yafaev R. Hallen A.; Kuznetsov A.; Konstantinov A.

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Characterization of Al-implanted 4H SiC high voltage diodes

机译：注入铝的4H SiC高压二极管的特性

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The properties of 4H-SiC chemical vapor deposition epitaxial layers were studied by different methods. The effects of structural defects in 4H-SiC epitaxial layers on electrical and luminescence properties of Al high dose ion implanted p(+)-n junctions were studied. It has been shown that the structural imperfections of low-doped layers affect some electrical characteristics of the ion doped p(+)-n junctions created in these epitaxial layers. [References: 5]

机译：采用不同的方法研究了4H-SiC化学气相沉积外延层的性能。研究了4H-SiC外延层中的结构缺陷对Al高剂量离子注入p（+）-n结的电学和发光性能的影响。已经表明，低掺杂层的结构缺陷会影响在这些外延层中形成的离子掺杂p（+）-n结的某些电学特性。 [参考：5]

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《Physica Scripta: An International Journal for Experimental and Theoretical Physics》 |2002年第0期|共4页
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Kalinina E.; Onushkin G.; Strelchuk A.; Davidov D.; Kossov V.; Yafaev R. Hallen A.; Kuznetsov A.; Konstantinov A.;
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中图分类物理学;
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1. 一种具有三维p型埋层的超高压4H-SiC混合PiN肖特基二极管 [J] . 杨帅, 张晓东, 曹安, 中南大学学报（英文版） . 2021,第012期
2. Characterization of Al-implanted 4H SiC high voltage diodes [J] . Kalinina E., Onushkin G., Strelchuk A., Physica Scripta: An International Journal for Experimental and Theoretical Physics . 2002,第0期

机译：注入铝的4H SiC高压二极管的特性
3. P-type 4H and 6H-SiC high-voltage Schottky barrier diodes [J] . Raghunathan R., Baliga B.J. IEEE Electron Device Letters . 1998,第3期

机译：P型4H和6H-SiC高压肖特基势垒二极管
4. Characterization of GaN/(4H)SiC Heterostructure Vertical pn Power Diode [J] . Srikanta Bose, S. K. Mazumder Journal of Low Power Electronics . 2013,第1期

机译：GaN /（4H）SiC异质结构垂直pn功率二极管的表征
5. CM-wave modulator with high-voltage 4H SiC pin diodes [C] . M.S. Boltovets, V.V. Basanets, A.V. Zorenko, International Conference on Silicon Carbide and Related Materials . 2006

机译：具有高压4H SiC引脚二极管的CM波调制器
6. Design, Fabrication and Characterization of High Voltage (>10 kV) 4H-SiC MPS Diodes [D] . Jiang, Yifan. 2019

机译：高压（> 10 kV）4H-SiC MPS二极管的设计，制造和表征
7. Theoretical and Experimental Study of 13.4 kV/55 A SiC PiN Diodes with an Improved Trade-Off between Blocking Voltage and Differential On-Resistance [O] . Yuewei Liu, Ruixia Yang, Yongwei Wang, 2019

机译：13.4 kV / 55 A SiC PiN二极管的理论和实验研究其在闭锁电压和差分导通电阻之间取得了较好的折衷
8. Characterization of in-grown stacking faults in 4H-SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes [O] . Fujiwara H, Kimoto T, Tojo T, 2005

机译：4H-SiC（0001）外延层中向内生长的堆叠缺陷的表征及其对高压肖特基势垒二极管的影响

Characterization of Al-implanted 4H SiC high voltage diodes

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