...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Time-resolved micro-photoluminescence studies of dopant distribution in selectively regrown GalnP : Fe around VCSELs
【24h】

Time-resolved micro-photoluminescence studies of dopant distribution in selectively regrown GalnP : Fe around VCSELs

机译：VCSEL周围选择性再生的GalnP：Fe中掺杂物分布的时间分辨微光致发光研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We apply time-resolved photoluminescence with 1.5 mum spatial resolution for characterization ofcarrier trap distribution in semi-insulating Ga0.51In0.49P:Fe layers regrown around GaAs/AlGaAs circular vertical cavity surface emitting laser mesas using hydride vapour phase epitaxy. The carrier trapping times are in the range from 10 to 15 ps and quite uniformly distributed throughout the burying GaInP:Fe layer, suggesting that the layer is semi-insulating everywhere. Simulations show that, in addition to the Fe dopants, the layer contains other, unintended carrier traps. The photoluminescence spectra reveal that the regrown GaInP:Fe material has several distinct regions with different band gaps. This is attributed to differences in the In/Ga composition and/or CuPt ordering of the GaInP. [References: 6]
机译：我们应用时间分辨的1.5微米空间分辨率的光致发光来表征在氢化物气相外延法生长在GaAs / AlGaAs圆形垂直腔表面发射激光台面周围的半绝缘Ga0.51In0.49P：Fe层中的载流子陷阱分布。载流子捕获时间在10到15 ps的范围内，并且在整个掩埋GaInP：Fe层中非常均匀地分布，这表明该层到处都是半绝缘的。模拟表明，除铁掺杂剂外，该层还包含其他意外载流子陷阱。光致发光光谱表明，再生长的GaInP：Fe材料具有几个不同的带隙不同的区域。这归因于GaInP的In / Ga组成和/或CuPt顺序的差异。 [参考：6]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号