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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Electronic structure and optical properties of dilute InAs1-xNx: pseudopotential calculations
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Electronic structure and optical properties of dilute InAs1-xNx: pseudopotential calculations

机译：稀InAs1-xNx的电子结构和光学性质：伪电势计算

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摘要

The energy band gaps, the electron and heavy hole effective masses and dielectric constants of ternary dilute alloys InAs1-xNx are calculated using the pseudopotential method. The study was undertaken for small amounts of N. The disorder in these alloys is modeled by an improved virtual crystal approximation approach. The numerical results thus obtained are compared where possible with experimental and previous theoretical data. It is found that the incorporation of a few per cent of N in InAs reduces substantially the fundamental band-gap energy, which is a manifestation of the huge band-gap bowing commonly reported in the III-V-N-type alloys. The behavior of all studied quantities with respect to the nitrogen concentration x is shown to be nonlinear. The information gathered by the present study may be useful for mid-infrared applications.
机译：使用拟电位法计算三元稀合金InAs1-xNx的能带隙，电子和重空穴有效质量以及介电常数。该研究是针对少量N进行的。这些合金中的无序度是通过改进的虚拟晶体近似方法建模的。将由此获得的数值结果与实验数据和先前的理论数据进行比较。发现在InAs中掺入百分之几的N会大大降低基带隙能量，这是III-V-N型合金中普遍报道的巨大的带隙弯曲的体现。所有研究量相对于氮浓度x的行为均显示为非线性。本研究收集的信息可能对中红外应用很有用。

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