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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Estimation of the density of defect states in glassy Se _(80-x)Te_(20)Sn_x alloys using ac conductivity measurements
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Estimation of the density of defect states in glassy Se _(80-x)Te_(20)Sn_x alloys using ac conductivity measurements

机译：利用交流电导率测量估算玻璃态Se _（80-x）Te_（20）Sn_x合金中缺陷态的密度

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摘要

In this paper, we have studied the temperature and frequency dependence behavior of ac conductivity in the glassy system Se_(80-x)Te _(20)Sn_x (0≤x≤10). All the measurements have been carried out in the frequency range 1-500 kHz and in the temperature range from room temperature to the glass transition temperature T_g. The density of defect states has been determined using the correlated barrier-hopping model for all these glassy alloys. The appearance of local extrema in the density of defect states is explained in terms of the change from one-dimensional (1D) to 2D structure (from 'bundles' to 'layers') and from 2D to 3D structure (from 'layers' to 'clusters').
机译：在本文中，我们研究了玻璃系统Se_（80-x）Te _（20）Sn_x（0≤x≤10）中交流电导率的温度和频率依赖性行为。所有测量均在1-500 kHz频率范围以及从室温到玻璃化转变温度T_g的温度范围内进行。对于所有这些玻璃态合金，已经使用相关的势垒跳跃模型确定了缺陷状态的密度。通过从一维（1D）到2D结构（从“束”到“层”）和从2D到3D结构（从“层”到“层”）的变化来解释缺陷状态密度中局部极值的出现。 “集群”）。

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