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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Doubly patternable planarizing lithography with AZ5214E resist for three dimensional processing
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Doubly patternable planarizing lithography with AZ5214E resist for three dimensional processing

机译：使用AZ5214E抗蚀剂进行可双重图案化的平面光刻，以进行三维处理

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In this paper we introduce a lithography method for AZ5214E resist that adds three dimensionality into the standard optical lithography With the method we are able to define, e.g., shallow air bridges and metal cross-overs in a single lithography step thus simplifying the device prosessing considerably. The main aim of the original process is towards metallization of nano- and micrometer scale vertical structures with device height of about I micrometers or less. Our method for doubly patternable planarizing lithography with AZ5214E resist relies on utilizing optically sensitive AZ5214E in both planarizing layer and top layer in a way that the planarizing layer is patternable separately. The planarizing layer is patterned in the image reversal mode of the resist, and the associated lithography steps are integrated with top layer processing such that the overall lithography is kept simple and reproducible. The typical thickness of the planarizing layer is 1,4 mum, which forms the upper limit for the vertical height of structures defined with the planarizing layer. We demonstrate the applicability of the doubly patternable lithography with an implementation to our heterojunction bipolar transistor process. The process included air bridged metal cross overs and air bridges for smooth entrance into the transistor active area. Finally, the applicability of our process towards small 3D structures is briefly discussed. [References: 1]
机译：在本文中，我们介绍了一种用于AZ5214E抗蚀剂的光刻方法，该光刻方法在标准光学光刻中增加了三维尺寸。借助该方法，我们能够在单个光刻步骤中定义例如浅气桥和金属跨接，从而大大简化了器件制造过程。原始工艺的主要目标是对器件高度约为1微米或更小的纳米和微米级垂直结构进行金属化。我们用AZ5214E抗蚀剂进行双重可图形化平坦化光刻的方法依赖于在平坦化层和顶层中都使用光学敏感的AZ5214E，以使平坦化层可分别进行构图。以抗蚀剂的图像反转模式对平坦化层进行构图，并且将相关的光刻步骤与顶层处理集成在一起，从而使整个光刻保持简单且可再现。平坦化层的典型厚度为1.4μm，这形成了由平坦化层限定的结构的垂直高度的上限。我们通过实现我们的异质结双极晶体管工艺展示了可双重图案化光刻的适用性。该过程包括空气桥接的金属分频器和空气桥接器，以平滑地进入晶体管有源区。最后，简要讨论了我们的过程对小型3D结构的适用性。 [参考：1]

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