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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Theory of spin disorder scattering in heavily Mn-doped GaAs: A self-consistent approach
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Theory of spin disorder scattering in heavily Mn-doped GaAs: A self-consistent approach

机译：重掺杂Mn的GaAs中自旋无序散射的理论：一种自洽方法

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We have studied the theory of spin disorder scattering in Mn-doped GaAs by calculating in the weak coupling limit the charge carrier mobility limited by the critical scattering. The theory is developed by using Matsubara's temperature Green's functions and treating the exchange interaction between the carrier spins and the localized magnetic moments of the Mn-ions as a perturbation. The carrier life-time and the perturbed band energy are both calculated from the second order self-energy in a self-consistent manner in the sense that first the infinite order correction to the band energy is calculated by iterations, and then the corrected energy is inserted in the expression for the carrier life-time. Adding a contribution from the impurity scattering the total hole mobility can be estimated. Comparison of the calculated results to the experimental magnetotransport data shows good agreement. However, the measured resistivity peak near the Curie temperature is broader than the calculated one, which together with the large exchange parameter calls for an extension of the present theory to the intermediate or strong coupling cases. [References: 11]
机译：通过在弱耦合极限中计算由临界散射所限制的载流子迁移率，我们研究了锰掺杂GaAs中自旋无序散射的理论。该理论是通过使用松原的温度格林函数并以载流子自旋与Mn离子的局部磁矩之间的交换相互作用为扰动而发展起来的。载波寿命和被干扰的带能量都以自洽的方式从二阶自能量中计算得出，即首先通过迭代计算出对带能量的无穷大校正，然后将校正后的能量计算为插入表达式中以获取载体寿命。加上杂质散射的贡献，可以估算出总空穴迁移率。计算结果与实验磁传输数据的比较显示出很好的一致性。然而，在居里温度附近测得的电阻率峰比计算出的电阻率峰宽，这与较大的交换参数一起要求将本理论扩展到中度或强耦合情况。 [参考：11]

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