Analytical model of breakdown voltage and on-resistance for PN diodes with linearly doped epi layer

Kim SH.; Park IY.; Choi YI.; Chung SK.

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Analytical model of breakdown voltage and on-resistance for PN diodes with linearly doped epi layer

机译：线性掺杂外延层的PN二极管的击穿电压和导通电阻的解析模型

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Closed-form expressions for breakdown voltage and on-resistance of linearly doped pn diodes are derived in terms of the concentration ratio of the final to the initial value of a linearly doped epi layer. Analytical results for the maximum depletion width, critical electric field, and breakdown voltage are verified by the device simulator MEDICI. The minimum on-resistance is found to occur when the concentration ratio approaches 2.2, yielding a reduction of 8.3% in the on-resistance compared to that for the uniformly doped pn diode. [References: 4]

机译：根据线性掺杂外延层的最终值与初始值的浓度比，得出线性掺杂pn二极管的击穿电压和导通电阻的闭合形式。通过器件仿真器MEDICI验证了最大耗尽宽度，临界电场和击穿电压的分析结果。发现当浓度比接近2.2时会出现最小的导通电阻，与均匀掺杂的pn二极管相比，导通电阻降低8.3％。 [参考：4]

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《Physica Scripta: An International Journal for Experimental and Theoretical Physics》 |2002年第0期|共4页
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Kim SH.; Park IY.; Choi YI.; Chung SK.;
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1. Analytical model of breakdown voltage and on-resistance for PN diodes with linearly doped epi layer [J] . Kim SH., Park IY., Choi YI., Physica Scripta: An International Journal for Experimental and Theoretical Physics . 2002,第0期

机译：线性掺杂外延层的PN二极管的击穿电压和导通电阻的解析模型
2. Analytical Models for Breakdown Voltage and Specific On-Resistance of 6H-SiC Schottky Diodes [J] . Yongsung CHUNG 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2007,第111期

机译：6H-SiC肖特基二极管的击穿电压和比导通电阻的解析模型
3. Analytical Models for Breakdown Voltage and Specific On-Resistance of 6H-SiC Schottky Diodes [J] . Yongsung CHUNG 電子情報通信学会技術研究報告. 電子デバイス. Electron Devices . 2007,第110期

机译：6H-SiC肖特基二极管的击穿电压和比导通电阻的解析模型
4. Epilayer Thickness and Doping Density Variation Effects on Current-Voltage (I-V) Characteristics of n-GaN Schottky Diode [C] . Munir, Tariq, Aziz, . 2006

机译：外延层厚度和掺杂浓度变化对n-GaN肖特基二极管电流-电压（I-V）特性的影响
5. A novel trench lateral power MOSFET with high breakdown voltage and low on-resistance [D] . Fujishima, Naoto 1998

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6. High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer [O] . Chao Yang, Xiaorong Luo, Tao Sun, 2019

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7. Analytical Models of Breakdown Voltage and Specific On-Resistance for Vertical GaN Unipolar Devices [O] . Haimeng Huang, Jun Huang, Huan Hu, 2019

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8. Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC pn Junction Diodes - Part 1: DC Properties [R] . Neudeck, Philip G., Huang, Wei, Dudley, Michael 1999

机译：低压（＆lt; 250 V）4H-siC pn结二极管中体积和基本螺旋位错辅助反向击穿的研究 - 第1部分：直流特性

Analytical model of breakdown voltage and on-resistance for PN diodes with linearly doped epi layer

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