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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Interface excitons in a type-II ZnSe/ZnTe heterojunction under hydrostatic pressure: the triangle potential well approximation
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Interface excitons in a type-II ZnSe/ZnTe heterojunction under hydrostatic pressure: the triangle potential well approximation

机译：静水压力下II型ZnSe / ZnTe异质结中的界面激子：三角势阱近似

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摘要

Taking into consideration the band bending near the interface and the electron-LO phonon interaction, the ground-state binding energies of interface heavy-hole excitons in ZnSe/ZnTe type-II heterojunctions under the influence of hydrostatic pressure are calculated using a variational method. The heterojunction is approximated as a quantum well with finite triangle confining potentials for both electrons and holes. The subband energies and wavefunctions of the electrons and heavy holes are obtained with the help of the asymptotic transfer method. The results show that the effect of the electron (hole)-LO phonon interaction on the exciton binding energy is not neglected for the ZnSe/ZnTe type-II heterojunctions. The pressure-induced increase of the exciton binding energy is obvious and the increase is mainly through the pressure influence on the electron effective masses.
机译：考虑到界面附近的能带弯曲和电子-LO声子相互作用，采用变分法计算了ZnSe / ZnTe II型异质结在静水压力作用下界面重空穴激子的基态结合能。异质结近似为对电子和空穴都具有有限三角形限制电势的量子阱。电子和重空穴的子带能量和波函数借助渐近转移方法获得。结果表明，对于ZnSe / ZnTe II型异质结，电子（空穴）-LO声子相互作用对激子结合能的影响不容忽视。压力引起的激子结合能的增加是明显的，并且增加主要是由于压力对电子有效质量的影响。

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