• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Optoelectronic properties of Ga4Se3S-layered single crystals
【24h】

Optoelectronic properties of Ga4Se3S-layered single crystals

机译：Ga4Se3S层单晶的光电性能

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The optoelectronic properties of Bridgman method-grown Ga4Se3S single crystals have been investigated by means of room temperature electrical resistivity, temperature-dependent photosensitivity and temperature-dependent optical absorption. The photosensitivity was observed to increase with decreasing temperature, the illumination dependence of which was found to exhibit monomolecular recombination in the bulk at 300 K. The absorption coefficient, which was calculated in the incident photon energy range of 2.01-2.35 eV, increased with increasing temperature. Consistently, the absorption edge shifts to lower energy values. The fundamental absorption edge corresponds to an indirect allowed transitions energy gap (2.08 eV at 300 K) that exhibits a temperature coefficient of -95 x 10(-4) eVK(-1).
机译：通过室温电阻率，与温度有关的光敏性和与温度有关的光吸收，研究了布里奇曼方法生长的Ga4Se3S单晶的光电性能。观察到光敏性随温度降低而增加，发现其照度依赖性在300 K时整体上表现出单分子重组。在2.01-2.35 eV入射光子能量范围内计算得出的吸收系数随温度增加而增加。温度。一致地，吸收边移到较低的能量值。基本吸收边对应于一个间接允许的跃迁能隙（在300 K下为2.08 eV），其温度系数为-95 x 10（-4）eVK（-1）。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号