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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Frequency and voltage dependence of electric and dielectric properties of Au/TiO2-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes
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Frequency and voltage dependence of electric and dielectric properties of Au/TiO2-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes

机译：Au / TiO2 / n-4H-SiC（金属-绝缘体-半导体）型肖特基势垒二极管的电和介电特性的频率和电压依赖性

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摘要

The main electrical and dielectric properties of Au/TiO2-4H-SiC (MIS) type Schottky barrier diodes (SBDs) have been investigated as functions of frequency and applied bias voltage. We believe that the use of high dielectric interfacial layer between metal and semiconductor can improve the performance of Schottky diodes. From the experimental data, both electrical and dielectric parameters were found as strong function of frequency and applied bias voltage. The Fermi energy level (E-F), the concentration of doping donor atoms (P), barrier height (Phi(B)) and series resistance (R-s) values were obtained from reverse and forward bias C-V characteristics. The changes in E-F and N-D with frequency are considerably low. Therefore, their values were taken at about constant. The real and imaginary parts of dielectric constant (epsilon', epsilon ''), tangent loss (tan delta), ac electrical conductivity (sigma(ac)), and real and imaginary parts of electric modulus (M' and M '') values were also obtained from reverse and forward bias C-V and G/omega-V characteristics. In addition, the voltage dependent profiles of all these electrical and dielectric parameters were drawn for each frequency. These results confirmed that both electrical and dielectric properties of Au/TiO2-4H-SiC (MIS) type SBD are quite sensitive to both the frequency and applied bias voltage due to surface polarization, density distribution of interface traps (D-it), and interfacial layer.
机译：研究了Au / TiO2 / n-4H-SiC（MIS）型肖特基势垒二极管（SBD）的主要电学和介电性能，它是频率和施加的偏置电压的函数。我们相信，在金属和半导体之间使用高介电界面层可以改善肖特基二极管的性能。从实验数据中，发现电和介电参数均与频率和施加的偏置电压密切相关。费米能级（E-F），掺杂施主原子的浓度（P），势垒高度（Phi（B））和串联电阻（R-s）值是通过反向和正向偏置C-V特性获得的。 E-F和N-D随频率的变化非常小。因此，它们的值大致保持不变。介电常数的实部和虚部（epsilon'，epsilon''），切线损耗（tanδ），交流电导率（sigma（ac））以及电模量的实部和虚部（M'和M''）还可以从反向和正向偏置CV和G / omega-V特性获得值。另外，针对每个频率绘制了所有这些电和介电参数的电压相关曲线。这些结果证实，由于表面极化，界面陷阱的密度分布（D-it），Au / TiO2 / n-4H-SiC（MIS）型SBD的电学和介电性能对频率和施加的偏置电压都非常敏感。以及界面层。

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